Theoretical Analysis of a pn‐Diode on AIN with Distributed Polarization Doping

Distributed polarization doping (DPD) represents a promising pathway toward high aluminum () mole fraction aluminum gallium nitride () electronic devices. In order to design more complex high mole fraction devices such as transistors, accurate device modeling is a valuable tool. This article provides a theoretical analysis including special peculiarities of DPD heterojunction devices, material parameters appropriate for high mole fraction materials, and geometry, e.g., rotational symmetry. Moreover, the article studies the temperature‐dependent mobility of DPD devices and addresses the breakdown capabilities of high mole fraction materials.