Tailoring Topological States and Anomalous Transport via Magnetization Direction in MnSb

ABSTRACT Based on first‐principles calculations and symmetry analysis, we report a magnetization‐orientation‐controlled topological phase transition and anomalous transport effects in hexagonal MnSb. Owing to its remarkably low magnetic anisotropy energy (0.465 meV), the magnetization direction in MnSb can be readily manipulated by external perturbations. Without spin‐orbit coupling (SOC), a symmetry‐protected Dirac point (DP) lies 9 meV below the Fermi level. Upon inclusion of SOC, this DP undergoes an evolution as a function of magnetization orientation: it opens a gap at θ = 0° (magnetization along the a ‐axis) due to the symmetry breaking, and transforms into four Weyl points at θ = 90° (magnetization along the c ‐axis). These topological transitions are accompanied by significant Berry curvature reconstruction, which profoundly influences the anomalous transport responses. Specifically, the anomalous Hall conductivity increases monotonically from –100.64 Ω −1 cm −1 at θ = 0° to a maximum of –754.72 Ω −1 cm −1 at θ = 90°, whereas the anomalous Nernst coefficient undergoes a sign reversal, changing from +0.50 Am −1 K −1 to –0.09 Am −1 K −1 as the magnetization rotates. Our work establishes a design principle for engineering magnetic topological materials, with MnSb serving as a representative example to explore the interplay between magnetic order and topology‐driven transport phenomena. These findings bridge magnetism, topology, and transport physics, opening a pathway toward novel spintronic devices through tunable magnetization direction.

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Publication Details

Journal
Advanced Electronic Materials
Published
2025-11-25
DOI
https://doi.org/10.1002/aelm.202500714
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Tailoring Topological States and Anomalous Transport via Magnetization Direction in MnSb

Zhuhong Liu, Xiaotian Wang, Jiangtao Yu, Zhenzhou Guo et al.
Advanced Electronic Materials
Topological Materials and Phenomena
article

Tailoring Topological States and Anomalous Transport via Magnetization Direction in MnSb

Zhuhong Liu, Xiaotian Wang, Jiangtao Yu, Zhenzhou Guo, Shifeng Qian, Zezhong Li
article en

Abstract

ABSTRACT Based on first‐principles calculations and symmetry analysis, we report a magnetization‐orientation‐controlled topological phase transition and anomalous transport effects in hexagonal MnSb. Owing to its remarkably low magnetic anisotropy energy (0.465 meV), the magnetization direction in MnSb can be readily manipulated by external perturbations. Without spin‐orbit coupling (SOC), a symmetry‐protected Dirac point (DP) lies 9 meV below the Fermi level. Upon inclusion of SOC, this DP undergoes an evolution as a function of magnetization orientation: it opens a gap at θ = 0° (magnetization along the a ‐axis) due to the symmetry breaking, and transforms into four Weyl points at θ = 90° (magnetization along the c ‐axis). These topological transitions are accompanied by significant Berry curvature reconstruction, which profoundly influences the anomalous transport responses. Specifically, the anomalous Hall conductivity increases monotonically from –100.64 Ω −1 cm −1 at θ = 0° to a maximum of –754.72 Ω −1 cm −1 at θ = 90°, whereas the anomalous Nernst coefficient undergoes a sign reversal, changing from +0.50 Am −1 K −1 to –0.09 Am −1 K −1 as the magnetization rotates. Our work establishes a design principle for engineering magnetic topological materials, with MnSb serving as a representative example to explore the interplay between magnetic order and topology‐driven transport phenomena. These findings bridge magnetism, topology, and transport physics, opening a pathway toward novel spintronic devices through tunable magnetization direction.

Advanced Electronic MaterialsVol. 11(20)
University of Wollongong (AU), Anhui Normal University (CN), Beijing Information Science & Technology University (CN), University of Science and Technology Beijing (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 71%
Topological Materials and Phenomena
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