2D Weak Localization in ZnO Nanostripes
We fabricated oxygen-deficient ZnO thin films on sapphire substrates via pulsed laser deposition and precisely patterned them into 70 nm wide stripes using photolithography and focused ion beam nanomachining. This configuration allowed us to perform a detailed quantitative analysis of the weak localization (WL) anisotropy effects in a low-dimensional system. By aligning the magnetic field either parallel or perpendicular to the stripe plane in a maximum Lorentz force configuration, we uncovered a pronounced anisotropic magnetoresistance at low temperatures. Angle-dependent magnetoresistance measurements further elucidated this anisotropy, which is well described by the combination of Altshuler-Aronov’s 2D WL theory and the two-band model for positive magnetoresistance.
Authors
- Benjamín Straube (ORCID: https://orcid.org/0000-0003-4391-1720)
- M. Villafuerte (ORCID: https://orcid.org/0000-0002-1799-0595)
- J. M. Ferreyra (ORCID: https://orcid.org/0000-0001-7701-6930)
- C. Figueroa (ORCID: https://orcid.org/0000-0002-4975-3543)
- J. Guimpel (ORCID: https://orcid.org/0000-0002-7528-7777)
- Luciano Patrone
- Gabriel Juárez (ORCID: https://orcid.org/0000-0002-5854-6925)
- G. Bridoux (ORCID: https://orcid.org/0000-0002-0505-9613)
- G. Nieva (ORCID: https://orcid.org/0000-0001-9889-9875)
- María Laura Malatto
Institutions
- National University of Tucumán (AR)
- Consejo Nacional de Investigaciones Científicas y Técnicas (AR)
- Balseiro Institute (AR)
- Bariloche Atomic Centre (AR)
- National Institute of Industrial Technology (AR)
- Centro de Tecnologia Mineral (BR)
- Comisión Nacional de Energía Atómica (AR)
Publication Details
- Journal
- ACS Applied Electronic Materials
- Published
- 2025-11-13
- DOI
- https://doi.org/10.1021/acsaelm.5c01693
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.00