Layer Dependence and Point Defect for Sub-5 nm 2D Hydrogenated GaN Transistors

Silicon-based devices face intrinsic physical limitations in high-power and high-frequency applications due to their narrow bandgap and low breakdown strength. As an emerging postsilicon semiconductor, gallium nitride (GaN) offers significant advantages for next-generation high power electronics owing to its wide bandgap, high breakdown field strength, and outstanding radiation tolerance. In this work, we investigate the layer dependence and point defect of sub-5 nm hydrogenated GaN (H-GaN) transistors by ab-intio quantum transport simulation. The n-type H-GaN transistors with monolayer (ML), bilayer (BL), and trilayer (TL) channels all meet the ITRS on-state current targets. The ML devices yield the optimal performance with an Ion of 2694 μA/μm, which exceeds those of the BL (2536 μA/μm) and TL (1974 μA/μm). Furthermore, atomic vacancy defects critically impact transport: for n-type ML devices, single N and Ga vacancies reduce Ion from 2694 to 1242 and 5.72 μA/μm, respectively. Our work provides theoretical guidance for the miniaturization of future low-dimensional high-power GaN electronic devices.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-11-10
DOI
https://doi.org/10.1021/acsaelm.5c01648
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26
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article

Layer Dependence and Point Defect for Sub-5 nm 2D Hydrogenated GaN Transistors

Shuang Zhao, Xuelin Yang, Zongmeng Yang, Xingyue Yang et al.
1 citations
ACS Applied Electronic Materials
GaN-based semiconductor devices and materials
1.26
article

Layer Dependence and Point Defect for Sub-5 nm 2D Hydrogenated GaN Transistors

Shuang Zhao, Xuelin Yang, Zongmeng Yang, Xingyue Yang, Fengping Luo, Shibo Fang, Gehui Zhang, Yee Sin Ang, Han Yang, Jin Wang, Chenxu Wang, Zheng Tao, Yugang Wang, Jing Lu
article en
1 citations

Abstract

Silicon-based devices face intrinsic physical limitations in high-power and high-frequency applications due to their narrow bandgap and low breakdown strength. As an emerging postsilicon semiconductor, gallium nitride (GaN) offers significant advantages for next-generation high power electronics owing to its wide bandgap, high breakdown field strength, and outstanding radiation tolerance. In this work, we investigate the layer dependence and point defect of sub-5 nm hydrogenated GaN (H-GaN) transistors by ab-intio quantum transport simulation. The n-type H-GaN transistors with monolayer (ML), bilayer (BL), and trilayer (TL) channels all meet the ITRS on-state current targets. The ML devices yield the optimal performance with an Ion of 2694 μA/μm, which exceeds those of the BL (2536 μA/μm) and TL (1974 μA/μm). Furthermore, atomic vacancy defects critically impact transport: for n-type ML devices, single N and Ga vacancies reduce Ion from 2694 to 1242 and 5.72 μA/μm, respectively. Our work provides theoretical guidance for the miniaturization of future low-dimensional high-power GaN electronic devices.

ACS Applied Electronic MaterialsVol. 7(22)
Singapore University of Technology and Design (SG), Peking University (CN), China North Industries Group Corporation (China) (CN), Longgang Central Hospital (CN), Innovation Cluster (Canada) (CA), Key Laboratory of Nuclear Radiation and Nuclear Energy Technology (CN), Institute of Navigation (US)
Openalex Percentile: Top 16%
GaN-based semiconductor devices and materials
1.26
DOISourceOpenAlex
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