Solution-processed high- <i>κ</i> SrTiO <sub>3</sub> with high breakdown field for gate dielectrics

With the optimization of the film, strontium titanate films with a maximum breakdown field strength of 11.04 MV cm −1 were obtained.

Authors

Han He (ORCID: https://orcid.org/0000-0002-7348-1568)
Bingsuo Zou (ORCID: https://orcid.org/0000-0003-4561-4711)
Boxi Ye (ORCID: https://orcid.org/0009-0009-3178-2264)
Hao Huang (ORCID: https://orcid.org/0000-0003-4416-5459)
Haowei Li (ORCID: https://orcid.org/0009-0009-0680-6869)
Daocheng Pan (ORCID: https://orcid.org/0000-0002-8273-6331)
Liting Liu (ORCID: https://orcid.org/0000-0002-5463-4821)
Nengneng Luo (ORCID: https://orcid.org/0000-0001-7033-7176)
Zihao Chen (ORCID: https://orcid.org/0000-0001-5315-9005)
Dinghao Ma
Shiwei Sun (ORCID: https://orcid.org/0000-0002-0351-3720)