Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications

Transient electronic systems offer compelling solutions for sustainable technologies, enabling environmentally benign disposal in ecological settings and eliminating surgical retrieval in biomedical implants. At the core of such systems, biodegradable semiconductors serve as key materials not only for logic operations but also for realizing diverse sensing modalities. Here, a comprehensive study of magnesium silicide (Mg<sub>2</sub>Si) thin films as a narrow-bandgap, biodegradable semiconductor platform for transient electronics is reported. Polycrystalline Mg<sub>2</sub>Si thin films are formed via RF magnetron sputtering and thermal annealing, followed by systematic investigation of their dissolution behavior under various pH and ionic conditions. Physiological relevance is confirmed by phosphate-buffered saline testing, while environmental biodegradability is validated under composting conditions. In vitro cytotoxicity assays confirmed the biocompatibility of the material and its degradation byproducts. Mg<sub>2</sub>Si thin films exhibit an indirect bandgap of ≈0.84 eV, intrinsic carrier concentration (>10<sup>18</sup> cm<sup>-3</sup>), and thermal conductivity (<1.8 W m<sup>-1</sup> K<sup>-1</sup>), along with broadband optical absorbance. Device-level integration into thermoelectric harvesters yielded Seebeck coefficients of ≈130 µV K<sup>-1</sup> and output power exceeding ≈0.338 µW cm<sup>-2</sup> K<sup>-2</sup>. Photosensors demonstrated photoresponse up to 1300 nm, confirming near-infrared sensitivity. These results establish Mg<sub>2</sub>Si as a viable semiconductor for transient electronics, expanding the material spectrum beyond conventional wide-bandgap semiconductors.

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Publication Details

Journal
Advanced Science
Published
2025-11-25
DOI
https://doi.org/10.1002/advs.202518093
Primary Topic
Magnesium Alloys: Properties and Applications
Type
article
Field-Weighted Citation Impact
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article

Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications

Kyung‐Sub Kim, E. Wyszkowska, Ji‐Woo Gu, Minjung Kathy Chae et al.
Advanced Science
Magnesium Alloys: Properties and Applications
article

Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications

Kyung‐Sub Kim, E. Wyszkowska, Ji‐Woo Gu, Minjung Kathy Chae, Tae‐Woo Lee, Jungho Shin, Yoonseong Jung, Hyejin Jang, Sungwoo Kim, Myoung‐Ryul Ok, Seung‐Kyun Kang, Young‐In Ryu, Jong‐hyoung Kim, Sung‐Woo Kim, Ju‐Young Kim, Jae‐Hwan Lee, Jun‐Seok Shim, Jae‐Young Bae
article en

Abstract

Transient electronic systems offer compelling solutions for sustainable technologies, enabling environmentally benign disposal in ecological settings and eliminating surgical retrieval in biomedical implants. At the core of such systems, biodegradable semiconductors serve as key materials not only for logic operations but also for realizing diverse sensing modalities. Here, a comprehensive study of magnesium silicide (Mg<sub>2</sub>Si) thin films as a narrow-bandgap, biodegradable semiconductor platform for transient electronics is reported. Polycrystalline Mg<sub>2</sub>Si thin films are formed via RF magnetron sputtering and thermal annealing, followed by systematic investigation of their dissolution behavior under various pH and ionic conditions. Physiological relevance is confirmed by phosphate-buffered saline testing, while environmental biodegradability is validated under composting conditions. In vitro cytotoxicity assays confirmed the biocompatibility of the material and its degradation byproducts. Mg<sub>2</sub>Si thin films exhibit an indirect bandgap of ≈0.84 eV, intrinsic carrier concentration (>10<sup>18</sup> cm<sup>-3</sup>), and thermal conductivity (<1.8 W m<sup>-1</sup> K<sup>-1</sup>), along with broadband optical absorbance. Device-level integration into thermoelectric harvesters yielded Seebeck coefficients of ≈130 µV K<sup>-1</sup> and output power exceeding ≈0.338 µW cm<sup>-2</sup> K<sup>-2</sup>. Photosensors demonstrated photoresponse up to 1300 nm, confirming near-infrared sensitivity. These results establish Mg<sub>2</sub>Si as a viable semiconductor for transient electronics, expanding the material spectrum beyond conventional wide-bandgap semiconductors.

Advanced ScienceVol. 13(15)
Gangneung–Wonju National University (KR), Seoul National University (KR), National Centre for Nuclear Research (PL), Bio-Medical Science (South Korea) (KR), Ulsan National Institute of Science and Technology (KR), Korea Institute of Science and Technology (KR), Korea University of Science and Technology (KR), Pukyong National University (KR)
Openalex Percentile: Top 75%
Magnesium Alloys: Properties and Applications
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