On the Edge: In situ Kelvin probe AFM on InP nanowire arrays

Surface physics play an outsized role in nanostructured electronic devices such as solar cells. Semiconductor nanowires are perfect candidates for advanced solar cells due to their outstanding light absorption properties and their flexibility in axially stacking materials of different doping and band gap. Due to nanowire geometry, however, their surfaces dominate device performance and at the same time are challenging to investigate. Kelvin probe force microscopy (KPFM), an atomic force microscopy (AFM)-based method, provides a unique structural and electrical characterization even in unconventional 3D geometries. We demonstrate a high-resolution, non-destructive AFM technique for directly measuring nanowires within an array and still on their growth substrate. This in situ approach ensures measurement integrity and relevance while preserving the structures for subsequent measurement and processing. When compared with electron beam-induced current, cross-sectional KPFM is both more surface sensitive and less destructive. Utilizing such a cross-sectional approach facilitates rapid and comprehensive characterization of nanoelectronic surfaces.