Arbitrary-ordered pulsed programming achieving 11 well-separated programming levels <i>via</i> a multilevel transistor–memristor series configuration
A memristor device exhibits multilevel resistance states with excellent endurance and retention. Arbitrary-ordered programming enables precise and flexible access to 11 well-separated program levels, advancing high-density memory applications.
Authors
- Wei-Lun Chen
- Jen‐Sue Chen (ORCID: https://orcid.org/0000-0002-5973-8670)
- Jing-Ci Gao
- C. L. Philip Chen (ORCID: https://orcid.org/0000-0001-5451-7230)
- Kuan‐Han Lin
- Kai-Shin Hsu
Institutions
- National Cheng Kung University (TW)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-11-25
- DOI
- https://doi.org/10.1039/d5tc03399c
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00