A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films
Abstract In this paper, we report a trigate fin-channel FET on very low-doped p-GaN films. While achieving a good source/drain ohmic contact mandates high p-GaN doping; a good Schottky gate interface, in contrast, demands low doping. We show that selective thermal diffusion of Mg is effective in enabling a good source/drain ohmic contact, whereas a low-doped p-GaN film enables good Schottky contact formation. The reported p-GaN FET showed an ON-resistance of ∼43 kΩ.mm and an I on / I off ratio of ∼10 6 .
Authors
- Enrico Zanoni (ORCID: https://orcid.org/0000-0001-7349-9656)
- Biplab Sarkar (ORCID: https://orcid.org/0000-0003-0074-0626)
- Shun Lu (ORCID: https://orcid.org/0000-0002-7342-757X)
- Manuel Fregolent (ORCID: https://orcid.org/0000-0003-0801-2260)
- Hiroshi Amano (ORCID: https://orcid.org/0000-0002-7598-2593)
- Jia Wang (ORCID: https://orcid.org/0000-0001-7025-6464)
- Matteo Meneghini (ORCID: https://orcid.org/0000-0003-2421-505X)
- Carlo De Santi (ORCID: https://orcid.org/0000-0001-6064-077X)
- Simranjit Singh (ORCID: https://orcid.org/0000-0002-6245-1590)
- Yoshio Honda (ORCID: https://orcid.org/0009-0003-3847-9408)
- Hirotaka Watanabe
- Gaudenzio Meneghesso
Institutions
- University of Padua (IT)
- Indian Institute of Technology Roorkee (IN)
- Nagoya University (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-11-25
- DOI
- https://doi.org/10.35848/1347-4065/ae23d6
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00