Tunable visible-light shift current in strain-engineered ferroelectric perovskite CsPbI ₃

Abstract Ferroelectric (FE) semiconductors have attracted significant attention in photovoltaic applications due to their spontaneous polarization and strong visible light absorption. In this study, we investigated the strain-engineered ferroelectricity in semiconducting halide perovskite α -CsPbI 3 using first-principles calculations. A strain-controlled shift current conductivity was achieved across the visible light spectrum for a wide range of applied strain. The present results provide valuable insights into the strain-controlled shift current photovoltaic effect in the FE semiconductors.