Two copper layer Insulated Metal Substrate PCB potential using Wide-Bandgap semiconductors
This paper evaluates two copper-layer Insulated Metal Substrate (IMS) PCBs for power converters, highlighting reduced parasitic inductance and strong thermal performance. It compares various layouts, considering parasitic capacitance, inductance, thermal resistance, and power density, demonstrating exceptional performance in a 4 kVA half-bridge with a 400 V dc-link design.
Authors
- Daniel Heredero-Peris
- Macià Capó-Lliteras (ORCID: https://orcid.org/0000-0003-2051-5311)
- Daniel Montesinos‐Miracle (ORCID: https://orcid.org/0000-0003-3983-0514)
- Pau Moreno-Rubio
Institutions
- Universitat Politècnica de Catalunya (ES)
Publication Details
- Journal
- SPIRE - Sciences Po Institutional REpository
- Published
- 2025-05-16
- DOI
- https://doi.org/10.34746/epe2025-0001
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00