Reversible Spin Splitting Effect in Altermagnetic RuO <sub>2</sub> Thin Films
Spin-dependent anisotropic Fermi surfaces in altermagnets can give rise to nonrelativistic spin-charge conversion, known as the altermagnetic spin splitting effect (ASSE). While several studies have reported the inverse ASSE (IASSE) in altermagnetic RuO<sub>2</sub> thin films, its magnitude and sign relative to the spin Hall effect (SHE) remain controversial. Here, we demonstrate reversible IASSE in RuO<sub>2</sub> thin films by controlling the Néel vector orientation and accounting for the anisotropic transport characteristic. Spin Seebeck measurements in CoFeB/RuO<sub>2</sub> heterostructures reveal polarity reversal of the IASSE-induced spin charge conversion (SCC) upon Néel vector switching. This indicates that IASSE can either enhance or suppress SCC depending on the Néel orientation. These results provide compelling evidence for the symmetry-governed and directionally reversible nature of IASSE in RuO<sub>2</sub>.
Authors
- Jaebyeong Lee
- H.D. Jung (ORCID: https://orcid.org/0000-0003-2294-2392)
- Yoon Seok Oh (ORCID: https://orcid.org/0000-0001-8233-1898)
- Gye-Hyeon Kim
- Jung‐Woo Yoo (ORCID: https://orcid.org/0000-0001-7038-4001)
- Jiyeon Lee
- Gimok So (ORCID: https://orcid.org/0009-0002-5121-2014)
- Seunghyeon Noh (ORCID: https://orcid.org/0009-0007-8456-8419)
- Changhee Sohn (ORCID: https://orcid.org/0000-0002-5043-497X)
- Dong‐Soo Han (ORCID: https://orcid.org/0000-0001-5530-8609)
- Uihyeon Seo (ORCID: https://orcid.org/0009-0005-8567-1368)
- Seunghyun Lee (ORCID: https://orcid.org/0000-0002-4701-2856)
- Hosub Jin
Institutions
- ON Semiconductor (United States) (US)
- Research Institute of Semiconductor Devices (RU)
- Ulsan National Institute of Science and Technology (KR)
- Korea Institute of Science and Technology (KR)
Publication Details
- Journal
- Nano Letters
- Published
- 2025-11-25
- DOI
- https://doi.org/10.1021/acs.nanolett.5c03644
- Primary Topic
- Magnetic properties of thin films
- Type
- article
- Field-Weighted Citation Impact
- 0.00