A threshold memristor based on self-assembled vertically aligned nanocomposite SrTiO3:Eu2O3 film for simulating biological pain receptors and LIF neurons

In the context of the rapid development of neuromorphic computing and high-density storage, threshold memristors have attracted the interest of researchers due to their ability to perform multiple biological functions, large switching ratios, and high stability. In this work, a threshold memristor with the Ag/SrTiO3 (STO):Eu2O3/Pt structure based on self-assembled vertically aligned STO:Eu2O3 films is proposed. The device demonstrates excellent unipolar threshold switching behavior with a high switching ratio (∼105) and low threshold voltage/hold voltage variation (4.4%/16.0%). Additionally, the device has a certain regulation law under pulse stimulation, and the number of pulses required for the device to turn on is proportional to the pulse amplitude and interval, and inversely proportional to the width. Notably, several features of biological pain receptors are effectively simulated using the device, and neuronal circuits are also constructed to implement the basic functions of Leaky-Integrate-and-Fire neurons, revealing the potential of the device in the field of biomimicry.