Strain control of the electronic structure in WS <sub>2</sub> homobilayers with 0° and 60° stacking angles

Two-dimensional transition metal dichalcogenides combine attractive semiconductor properties with exceptionally strong light-matter interaction. Their mechanical robustness allows the modulation of their optical and electronic functionalities <i>via</i> strain. Bilayers introduce the stacking angle as an additional parameter, whose role in the strain response is still elusive. Here, we combine differential reflectance spectroscopy and density functional theory calculations to explore the strain response of WS<sub>2</sub> homobilayers with 0° and 60° stacking angles. The change of the excitonic resonance energies and linewidths depends on the stacking angle, highlighting the scope for the manipulation of the electronic structure of two-dimensional semiconductors <i>via</i> the synergistic harnessing of the strain and angle control parameters.

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Publication Details

Journal
Nanoscale
Published
2025-11-25
DOI
https://doi.org/10.1039/d5nr01872b
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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Strain control of the electronic structure in WS 2 homobilayers with 0° and 60° stacking angles

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Strain control of the electronic structure in WS 2 homobilayers with 0° and 60° stacking angles

Christoph Gadermaier, Nataša Vujičić, Borna Radatović, Valentino Jadriško, Andrés Castellanos-Gómez, Dino Novko, Lei Qin, Yong Xie, Irantzu Landa-Garcia
article en

Abstract

Two-dimensional transition metal dichalcogenides combine attractive semiconductor properties with exceptionally strong light-matter interaction. Their mechanical robustness allows the modulation of their optical and electronic functionalities <i>via</i> strain. Bilayers introduce the stacking angle as an additional parameter, whose role in the strain response is still elusive. Here, we combine differential reflectance spectroscopy and density functional theory calculations to explore the strain response of WS<sub>2</sub> homobilayers with 0° and 60° stacking angles. The change of the excitonic resonance energies and linewidths depends on the stacking angle, highlighting the scope for the manipulation of the electronic structure of two-dimensional semiconductors <i>via</i> the synergistic harnessing of the strain and angle control parameters.

NanoscaleVol. 18(5)
Xidian University (CN), Instituto de Ciencia de Materiales de Madrid (ES), Institute of Physics (HR), University of Chemistry and Technology, Prague (CZ), Politecnico di Milano (IT)
European Commission, Ministerio de Ciencia e Innovación, European Regional Development Fund, Agencia Estatal de Investigación, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Openalex Percentile: Top 70%
2D Materials and Applications
DOIOpen Access PDFOpenAlex
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