Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs <sub>2</sub>

The nonlinear Hall effect (NLHE) with time-reversal symmetry has emerged as a transformative phenomenon within the Hall effect family, attracting significant interest due to its profound implications for both fundamental physics and technological applications. While prior studies have predominantly focused on NLHE in 2D materials, advancements in practical applications have been constrained by low operating temperatures and limited responsivity, typically below 10<sup>-4</sup> m/V. Achieving significant responsivity at room temperature (RT) in 3D systems has proven challenging, particularly for scattering-induced NLHE. Here, the discovery of disorder scattering-induced NLHE in chalcopyrite-type CdGeAs<sub>2</sub> bulk single crystals is reported, demonstrating a remarkable responsivity of up to 10<sup>-3</sup> m/V at RT. The studies reveal that NLHE not only facilitates ac-driven second harmonic and rectification Hall responses but also induces an exceptionally large anomalous Hall angle. Through band structure measurements by ARPES, DFT calculations, as well as symmetry and nonlinear Hall conductivity scaling analyses, disorder scattering is identified as the dominant mechanism for the NLHE in CdGeAs<sub>2</sub>. Leveraging the observed strong responsivity of NLHE at RT, its broadband electronic frequency mixing capability in the MHz range is further demonstrated. This work sets the foundation for integrating scattering-induced NLHE in 3D materials into very high-frequency mixing technologies.

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Journal
Advanced Materials
Published
2025-11-23
DOI
https://doi.org/10.1002/adma.202514217
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs 2

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Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs 2

Tae Heung Lim, Liang Fu, Venkatraman Gopalan, Kouji Segawa, Hsin Lin, Seng Huat Lee, Jingyang He, T. Sato, K. Nakayama, Tay‐Rong Chang, Yong P. Chen, Lujin Min, Zhiqiang Mao, Zhijian Xie, Yu Wang, Xingchen Pan, Tsutomu Iwaya
article en

Abstract

The nonlinear Hall effect (NLHE) with time-reversal symmetry has emerged as a transformative phenomenon within the Hall effect family, attracting significant interest due to its profound implications for both fundamental physics and technological applications. While prior studies have predominantly focused on NLHE in 2D materials, advancements in practical applications have been constrained by low operating temperatures and limited responsivity, typically below 10<sup>-4</sup> m/V. Achieving significant responsivity at room temperature (RT) in 3D systems has proven challenging, particularly for scattering-induced NLHE. Here, the discovery of disorder scattering-induced NLHE in chalcopyrite-type CdGeAs<sub>2</sub> bulk single crystals is reported, demonstrating a remarkable responsivity of up to 10<sup>-3</sup> m/V at RT. The studies reveal that NLHE not only facilitates ac-driven second harmonic and rectification Hall responses but also induces an exceptionally large anomalous Hall angle. Through band structure measurements by ARPES, DFT calculations, as well as symmetry and nonlinear Hall conductivity scaling analyses, disorder scattering is identified as the dominant mechanism for the NLHE in CdGeAs<sub>2</sub>. Leveraging the observed strong responsivity of NLHE at RT, its broadband electronic frequency mixing capability in the MHz range is further demonstrated. This work sets the foundation for integrating scattering-induced NLHE in 3D materials into very high-frequency mixing technologies.

Advanced MaterialsVol. 38(7)
Tainan University of Technology (TW), Pennsylvania State University (US), Kyoto Sangyo University (JP), Tohoku University (JP), Aarhus University (DK), Purdue University West Lafayette (US), North Carolina Agricultural and Technical State University (US), Advanced Institute of Materials Science (JP), Institute of Physics, Academia Sinica (TW), National Center for Theoretical Sciences (TW), National Center for Theoretical Sciences, Physics Division, Massachusetts Institute of Technology (US), National Cheng Kung University (TW)
National Science Foundation, U.S. Department of Energy, National Center for Theoretical Sciences, National Applied Research Laboratories, National Cheng Kung University, National Science and Technology Council, Division of Materials Research, Basic Energy Sciences, Core Research for Evolutional Science and Technology
Openalex Percentile: Top 71%
Topological Materials and Phenomena
DOIOpen Access PDFOpenAlex
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