Ultrawide Bandgap Lateral AlN Schottky Barrier Diodes With Graded AlGaN Contact Layer on Single‐Crystal AlN Substrate
Lateral AlN Schottky barrier diodes with a top graded AlGaN contact layer were demonstrated on single‐crystal AlN substrates, where the Ohmic contact showed nearly linear behaviors with a low contact resistivity of 1.54 × 10 −3 Ω cm 2 . The device exhibited good rectifying characteristics with a high on/off ratio of 10 7 –10 9 , an ideality factor of 2.94–1.07, and a Schottky barrier height of 1.24–2.06 eV from 298 to 573 K. The device's inhomogeneous Schottky barrier distribution was also comprehensively studied. The device breakdown voltage exceeded 640 V with a high average breakdown electric field of 129 V μm − 1 .
Authors
- Ziyi He (ORCID: https://orcid.org/0000-0003-3833-6426)
- Junzhe Xie (ORCID: https://orcid.org/0009-0005-2806-4713)
- Houqiang Fu (ORCID: https://orcid.org/0000-0002-1125-8328)
- Dinusha Herath Mudiyanselage (ORCID: https://orcid.org/0000-0001-8611-9296)
- Bingcheng Da (ORCID: https://orcid.org/0009-0008-1528-2836)
- Dawei Wang (ORCID: https://orcid.org/0000-0002-5121-9841)
Institutions
- Arizona State University (US)
Publication Details
- Journal
- physica status solidi (a)
- Published
- 2025-11-24
- DOI
- https://doi.org/10.1002/pssa.202500568
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation
- U.S. Department of Energy
- Arizona State University
- Office of Science
- Division of Electrical, Communications and Cyber Systems
- Basic Energy Sciences