Application of ALE for 3D Electronic Devices

Monolithic 3D integration is one of the vectors advancing device density of logic and memory integrated circuits. In this presentation, we will analyze device road maps and identify salient device architectures and materials. The ability to etch features with ever increasing high aspect ratios enables device cost roadmaps. Selective isotropic etching in combination with atomic layer deposition allows the formation of laterally stacked devices. New etching technologies are needed to pattern novel materials. To meet these requirements, innovative etching technologies such as thermal and atomic layer etching are being introduced to the industry. We will introduce the fundamentals, existing and potential applications as well as the capabilities and limits of these advanced these etching technologies.

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Publication Details

Journal
ECS Meeting Abstracts
Published
2025-11-24
DOI
https://doi.org/10.1149/ma2025-02313587mtgabs
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
0.00
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article

Application of ALE for 3D Electronic Devices

F. Roozeboom, Andreas Fischer
ECS Meeting Abstracts
3D IC and TSV technologies
article

Application of ALE for 3D Electronic Devices

F. Roozeboom, Andreas Fischer
article en

Abstract

Monolithic 3D integration is one of the vectors advancing device density of logic and memory integrated circuits. In this presentation, we will analyze device road maps and identify salient device architectures and materials. The ability to etch features with ever increasing high aspect ratios enables device cost roadmaps. Selective isotropic etching in combination with atomic layer deposition allows the formation of laterally stacked devices. New etching technologies are needed to pattern novel materials. To meet these requirements, innovative etching technologies such as thermal and atomic layer etching are being introduced to the industry. We will introduce the fundamentals, existing and potential applications as well as the capabilities and limits of these advanced these etching technologies.

ECS Meeting AbstractsVol. MA2025-02(31)
Applied Nanotech (United States) (US), Institute of Nanotechnology (GB), University of Twente (NL)
Openalex Percentile: Top 64%
3D IC and TSV technologies
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