Application of ALE for 3D Electronic Devices
Monolithic 3D integration is one of the vectors advancing device density of logic and memory integrated circuits. In this presentation, we will analyze device road maps and identify salient device architectures and materials. The ability to etch features with ever increasing high aspect ratios enables device cost roadmaps. Selective isotropic etching in combination with atomic layer deposition allows the formation of laterally stacked devices. New etching technologies are needed to pattern novel materials. To meet these requirements, innovative etching technologies such as thermal and atomic layer etching are being introduced to the industry. We will introduce the fundamentals, existing and potential applications as well as the capabilities and limits of these advanced these etching technologies.
Authors
- F. Roozeboom (ORCID: https://orcid.org/0000-0003-3925-7041)
- Andreas Fischer
Institutions
- Applied Nanotech (United States) (US)
- Institute of Nanotechnology (GB)
- University of Twente (NL)
Publication Details
- Journal
- ECS Meeting Abstracts
- Published
- 2025-11-24
- DOI
- https://doi.org/10.1149/ma2025-02313587mtgabs
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00