Polymer dielectrics enabled by molecular engineering design and charge trap regulation for high-temperature energy storage
The FPI dielectric film with 0.10 wt% MgO achieves a discharge energy density ( U d ) of 7.15 J cm −3 at room temperature and 4.97 J cm −3 at 150 °C, demonstrating great promise for advanced energy storage capacitors.
Authors
- Yongxue He (ORCID: https://orcid.org/0009-0009-9345-5680)
- Guangyu Duan (ORCID: https://orcid.org/0000-0001-7056-2648)
- Fengying Hu
- Jun‐Wei Zha (ORCID: https://orcid.org/0000-0003-3301-3505)
- Zuming Hu (ORCID: https://orcid.org/0000-0003-2666-4545)
- Ming Tian (ORCID: https://orcid.org/0000-0002-4820-7372)
Institutions
- Donghua University (CN)
- Beijing University of Technology (CN)
- Henan University of Engineering (CN)
- Beijing University of Chemical Technology (CN)
- Beijing Information Science & Technology University (CN)
- University of Science and Technology Beijing (CN)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-11-11
- DOI
- https://doi.org/10.1039/d5ta07395b
- Citations
- 1
- Primary Topic
- Dielectric materials and actuators
- Type
- article
- Field-Weighted Citation Impact
- 0.67