Electric-field switching of interlayer magnetic order in a van der waals heterobilayer via spin-electric potential
Electric-field control of magnetic order is of significant physical interest and holds great potential for spintronic applications. However, it has rarely been reported in two-dimensional (2D) van der Waals (vdW) magnets, primarily due to the inherently weak coupling between spin order and electric fields. Here we propose a general spin-electric potential mechanism that significantly enhances the magnetoelectric coupling. The spin-electric potential refers to the spin-order-dependent electric dipole potential energy originating from the polar spin interactions in asymmetric magnetic systems. Due to the additional spin-electric potential, the relative stability of different interlayer spin orders in a vdW heterobilayer can be significantly manipulated by external electric fields. Based on this mechanism, we design a series of 2D vdW all-magnetic heterobilayers, such as CrI<sub>3</sub>/MnSe<sub>2</sub>, in which a transition from interlayer spin-parallel (SP) to spin-antiparallel (SAP) order is realized by a feasible electric field of around 0.1 V/Å. Our findings not only reveal a novel magnetoelectric coupling mechanism, but also present a practical strategy for achieving pure electric field switching of magnetic order.
Authors
- Fang Wu (ORCID: https://orcid.org/0000-0002-0177-6498)
- Ziyang Qu (ORCID: https://orcid.org/0000-0002-5714-0296)
- Chengxi Huang (ORCID: https://orcid.org/0000-0003-1491-3954)
- Ang Li (ORCID: https://orcid.org/0000-0001-9679-0534)
- Jinzhe Han (ORCID: https://orcid.org/0000-0003-0623-3211)
- Erjun Kan (ORCID: https://orcid.org/0000-0003-0433-4190)
- Yi Wan (ORCID: https://orcid.org/0000-0003-1731-0737)
- Kaiyou Wang (ORCID: https://orcid.org/0000-0002-6017-7575)
- Jing Wang (ORCID: https://orcid.org/0000-0001-8549-852X)
- Jintao Jiang
Institutions
- Nanjing Forestry University (CN)
- Chinese Academy of Sciences (CN)
- Nanjing University of Science and Technology (CN)
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Nature Communications
- Published
- 2025-11-24
- DOI
- https://doi.org/10.1038/s41467-025-65371-1
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Fundamental Research Funds for the Central Universities