Introducing vacancy defects to induce ferroelectric-like switching in antiferroelectric oxides

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-11-25
DOI
https://doi.org/10.1039/d5tc03563e
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Introducing vacancy defects to induce ferroelectric-like switching in antiferroelectric oxides

Rajeev Ranjan, Pooja Punetha, Anil Adukkadan
Journal of Materials Chemistry C
Ferroelectric and Piezoelectric Materials
article

Introducing vacancy defects to induce ferroelectric-like switching in antiferroelectric oxides

Rajeev Ranjan, Pooja Punetha, Anil Adukkadan
article en

Abstract

No abstract available for this paper.
Journal of Materials Chemistry CVol. 14(5)
Indian Institute of Science Bangalore (IN)
Science and Engineering Research Board
Openalex Percentile: Top 71%
Ferroelectric and Piezoelectric Materials
DOIOpen Access PDFOpenAlex
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Introducing vacancy defects to induce ferroelectric-like switching in antiferroelectric oxides — Rajeev Ranjan, Pooja Punetha, et al. · Journal of Materials Chemistry C (2025) | TGRS Research Map | TGRS