Nanoscale Quantum Imaging of Field-Free Deterministic Switching of a Chiral Antiferromagnet

Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation have opened new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free deterministic magnetization switching for implementing scalable and energy favorable magnetic recording and storage, which have been demonstrated in conventional ferromagnetic and antiferromagnetic material systems. Here, we extend this advanced magnetization control strategy to chiral antiferromagnet Mn_{3}Sn using spin currents with out-of-plane canted polarization generated from low-symmetry van der Waals (vdW) material WTe_{2}. Numerical calculations suggest that dampinglike SOT of spins injected perpendicular to the kagome plane of Mn_{3}Sn serves as a driving force to rotate the chiral magnetic order, while the fieldlike SOT of spin currents with polarization parallel to the kagome plane provides the bipolar deterministicity to the magnetic switching in the absence of an external magnetic field. We further introduce scanning quantum microscopy to visualize nanoscale evolutions of Mn_{3}Sn magnetic domains during the field-free switching process, corroborating the exceptionally large magnetic switching ratio up to 90%. Our results highlight the opportunities provided by hybrid SOT material platforms consisting of noncollinear antiferromagnets and low-symmetry vdW spin source materials for developing next-generation spintronic logic devices.

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Publication Details

Journal
Physical Review Letters
Published
2025-11-24
DOI
https://doi.org/10.1103/hv6j-vzwf
Primary Topic
Topological Materials and Phenomena
Type
article
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article

Nanoscale Quantum Imaging of Field-Free Deterministic Switching of a Chiral Antiferromagnet

Takashi Taniguchi, Hanshang Jin, Kenji Watanabe, Claus S. Jacobsen et al.
Physical Review Letters
Topological Materials and Phenomena
article

Nanoscale Quantum Imaging of Field-Free Deterministic Switching of a Chiral Antiferromagnet

Takashi Taniguchi, Hanshang Jin, Kenji Watanabe, Claus S. Jacobsen, Chunhui Du, Chuangtang Wang, Senlei Li, Valentin Taufour, Hailong Wang, Hua Chen, Liuyan Zhao, Jingcheng Zhou, Sheng Xu, Zhan Xiong
article en

Abstract

Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation have opened new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free deterministic magnetization switching for implementing scalable and energy favorable magnetic recording and storage, which have been demonstrated in conventional ferromagnetic and antiferromagnetic material systems. Here, we extend this advanced magnetization control strategy to chiral antiferromagnet Mn_{3}Sn using spin currents with out-of-plane canted polarization generated from low-symmetry van der Waals (vdW) material WTe_{2}. Numerical calculations suggest that dampinglike SOT of spins injected perpendicular to the kagome plane of Mn_{3}Sn serves as a driving force to rotate the chiral magnetic order, while the fieldlike SOT of spin currents with polarization parallel to the kagome plane provides the bipolar deterministicity to the magnetic switching in the absence of an external magnetic field. We further introduce scanning quantum microscopy to visualize nanoscale evolutions of Mn_{3}Sn magnetic domains during the field-free switching process, corroborating the exceptionally large magnetic switching ratio up to 90%. Our results highlight the opportunities provided by hybrid SOT material platforms consisting of noncollinear antiferromagnets and low-symmetry vdW spin source materials for developing next-generation spintronic logic devices.

Physical Review LettersVol. 135(22)
Georgia Institute of Technology (US), National Institute for Materials Science (JP), University of Michigan (US), University of California System (US), University of California, Davis (US), Colorado State University (US)
Openalex Percentile: Top 72%
Topological Materials and Phenomena
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