Performance Evaluation of Three-Phase, Two-Level Medium Voltage Power Stack Based on 10 kV SiC MOSFETs

The performance of a 50 kVA three-phase, two-level medium voltage power stack based on 10 kV SiC MOSFETs has been evaluated under varying load conditions, i.e. voltage- and current-levels, coolant temperatures, and switching frequencies. A calorimetric measurement method is applied to estimate the power stack losses and its equivalent power stack efficiency. Experimental results from an inductive load test setup show an equivalent power stack efficiency of 98.8% ± 0.56‰ at 6 kV DC-link voltage, 10 kHz switching frequency, and 40◦C coolant temperature with a maximum MOSFET junction temperature of less than 115◦C and thermal resistance of 0.38 K/W.

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Publication Details

Journal
VBN Forskningsportal (Aalborg Universitet)
Published
2025-06-05
DOI
https://doi.org/10.34746/epe2025-0134
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

Performance Evaluation of Three-Phase, Two-Level Medium Voltage Power Stack Based on 10 kV SiC MOSFETs

Hongbo Zhao, Asger Bjørn Jørgensen, Stig Munk‐Nielsen, Michael Møller Bech et al.
VBN Forskningsportal (Aalborg Universitet)
Silicon Carbide Semiconductor Technologies
article

Performance Evaluation of Three-Phase, Two-Level Medium Voltage Power Stack Based on 10 kV SiC MOSFETs

Hongbo Zhao, Asger Bjørn Jørgensen, Stig Munk‐Nielsen, Michael Møller Bech, Morten Rahr Nielsen, Zhixing Yan, Martin Kjær, Gao Liu
article en

Abstract

The performance of a 50 kVA three-phase, two-level medium voltage power stack based on 10 kV SiC MOSFETs has been evaluated under varying load conditions, i.e. voltage- and current-levels, coolant temperatures, and switching frequencies. A calorimetric measurement method is applied to estimate the power stack losses and its equivalent power stack efficiency. Experimental results from an inductive load test setup show an equivalent power stack efficiency of 98.8% ± 0.56‰ at 6 kV DC-link voltage, 10 kHz switching frequency, and 40◦C coolant temperature with a maximum MOSFET junction temperature of less than 115◦C and thermal resistance of 0.38 K/W.

VBN Forskningsportal (Aalborg Universitet)
Aalborg University (DK)
Openalex Percentile: Top 64%
Silicon Carbide Semiconductor Technologies
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