Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching

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Publication Details

Journal
Microelectronics Reliability
Published
2026-01-27
DOI
https://doi.org/10.1016/j.microrel.2026.116024
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
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article

Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching

Laurence Allirand, Pascal Bevilacqua, Hervé Morel, Valeria Rustichelli et al.
Microelectronics Reliability
GaN-based semiconductor devices and materials
article

Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching

Laurence Allirand, Pascal Bevilacqua, Hervé Morel, Valeria Rustichelli, Maroun Alam, Thomas Vadebout
article en

Abstract

No abstract available for this paper.
Microelectronics ReliabilityVol. 178
IRT M2P (FR), Laboratoire Ampère (FR)
Openalex Percentile: Top 97%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
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Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching — Laurence Allirand, Pascal Bevilacqua, et al. · Microelectronics Reliability (2026) | TGRS Research Map | TGRS