Deposition of Thin Copper Films Using High-Temperature Plasma Flows on the Surface of Fe, V, and Ti Metals

The paper describes a method for depositing thin copper films (~0.5‒2.5 μm thick) on Fe, V, and Ti metal surfaces using high-temperature plasma flows. A plasma focus setup with an energy reserve of ~4 kJ is used to generate plasma flows. The elemental composition of Cu films is studied using Rutherford backscattering (RBS) spectrometry. In addition to Cu, the metal surfaces are found to contain C, O, N, and H atoms. It is found that the distribution profiles of these elements and their penetration depth depend on the substrate material: Fe, V, and Ti. The penetration depths of Cu and C atoms for Fe, V, and Ti substrates are ~106, ~120, and ~160 nm and ~150, ~120, and ~200 nm, respectively. A transition layer is found in the initial metal samples: Fe, V, and Ti with a thickness of ~0.01, 0.5, and 0.2 μm, respectively. It occurs after mechanical processing of samples and contains various impurities. An oxide film with a thickness of ~5 nm is found on the surface of the initial metal samples. It is assumed that the oxide film and the transition layer on the metal surface can have a significant effect on the adhesive and electrophysical properties of Cu films. The obtained results are of interest for research on the development of methods for obtaining thin, highly adhesive copper films on the surface of refractory materials. The scope of application of these films includes the production of microchips and electrical contacts, the obtaining of Ti‒Cu alloys for use in biomedical implants, coatings for solar batteries on board spacecraft, and metallization of dielectrics.