Efficient electrodynamic stripping for 12-inch wafer-scale freestanding ferroelectric oxide membranes

Developing an efficient and non-destructive stripping method suitable for most fragile freestanding films is essential for developing industrial semiconductor integration and flexible devices. Here, we propose a rapid stripping process of directional electrodynamic decomposition based on the conductive LaNiO<sub>3</sub> sacrificial layer, which can effectively overcome the surface tension during solution penetration. Notably, the release rate of oxide films can be increased to 600 mm<sup>2</sup>/min, which is two orders of magnitude more than that of traditional soaking method, ascribed to the improvement of the adsorption energy and electron transfer by the electric field. The electrodynamic stripping efficiency is not limited by thickness and area size of sacrificial layers and enables non-destructive and scalable fabrication of freestanding films. The crack-free 3-inch freestanding PbZrO<sub>3</sub> epitaxial membrane represents the largest ferroelectric-based membrane achieved to date, which enables its direct integration into flexible piezoelectric sensor array. Intriguingly, a record-breaking 12-inch polycrystalline membrane has been developed to address the requirements of industrial-scale semiconductor manufacturing. The strain-relaxed PbZrO<sub>3</sub> membranes exhibit the hysteresis loop of the antiferroelectric transition to ferroelectric. This electrodynamic approach with conductive sacrificial layer will greatly improve the stripping efficiency of high-quality functional freestanding membranes, thereby promoting their application in wafer-level electronic devices.

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Publication Details

Journal
Nature Communications
Published
2025-11-23
DOI
https://doi.org/10.1038/s41467-025-66697-6
Primary Topic
Advanced Sensor and Energy Harvesting Materials
Type
article
Field-Weighted Citation Impact
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article

Efficient electrodynamic stripping for 12-inch wafer-scale freestanding ferroelectric oxide membranes

Yue‐Wen Fang, Kuijuan Jin, Linxing Zhang, Jia‐Han Zhang et al.
Nature Communications
Advanced Sensor and Energy Harvesting Materials
article

Efficient electrodynamic stripping for 12-inch wafer-scale freestanding ferroelectric oxide membranes

Yue‐Wen Fang, Kuijuan Jin, Linxing Zhang, Jia‐Han Zhang, Enqi Sun, Xudong Liu, Chen Liu, X. G. Liu, Lei Guo, Shunli Ouyang, Shuai Xu, Dongxing Zheng, Siyuan Du, Jianjun Tian, Xixiang Zhang, Hangren Li, Jie Tu, Xianran Xing, Guoqiang Xi, Longyuan Shi
article en

Abstract

Developing an efficient and non-destructive stripping method suitable for most fragile freestanding films is essential for developing industrial semiconductor integration and flexible devices. Here, we propose a rapid stripping process of directional electrodynamic decomposition based on the conductive LaNiO<sub>3</sub> sacrificial layer, which can effectively overcome the surface tension during solution penetration. Notably, the release rate of oxide films can be increased to 600 mm<sup>2</sup>/min, which is two orders of magnitude more than that of traditional soaking method, ascribed to the improvement of the adsorption energy and electron transfer by the electric field. The electrodynamic stripping efficiency is not limited by thickness and area size of sacrificial layers and enables non-destructive and scalable fabrication of freestanding films. The crack-free 3-inch freestanding PbZrO<sub>3</sub> epitaxial membrane represents the largest ferroelectric-based membrane achieved to date, which enables its direct integration into flexible piezoelectric sensor array. Intriguingly, a record-breaking 12-inch polycrystalline membrane has been developed to address the requirements of industrial-scale semiconductor manufacturing. The strain-relaxed PbZrO<sub>3</sub> membranes exhibit the hysteresis loop of the antiferroelectric transition to ferroelectric. This electrodynamic approach with conductive sacrificial layer will greatly improve the stripping efficiency of high-quality functional freestanding membranes, thereby promoting their application in wafer-level electronic devices.

Nature CommunicationsVol. 16(1)
Shenzhen University (CN), Chinese Academy of Sciences (CN), Inner Mongolia University (CN), Beijing University of Technology (CN), Guangzhou Maritime College (CN), Material Physics Center (ES), Institute of Solid State Physics (CN), Institute of Physics (CN), National Laboratory for Superconductivity (CN), State Key Laboratory of New Ceramics and Fine Processing, Donostia International Physics Center (ES), King Abdullah University of Science and Technology (SA), University of Science and Technology Beijing (CN), Tsinghua University (CN)
National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities, Beijing Synchrotron Radiation Facility, National Program for Support of Top-notch Young Professionals
Openalex Percentile: Top 65%
Advanced Sensor and Energy Harvesting Materials
DOIOpen Access PDFOpenAlex
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