Precision high-speed quantum logic with holes on a natural silicon foundry platform

Abstract Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst retaining the salient features of a quantum dot qubit architecture. However, silicon hole spin qubits are not as advanced as electrons, due to increased susceptibility to disorder and more complex spin physics. Here we demonstrate single-qubit gate fidelities up to 99.8% and a two-qubit gate quality factor of 240, indicating a physical fidelity limit of 99.7%. These results represent the highest performance reported in natural silicon to date, made possible by fast qubit control, exchange pulsing, and industrial-grade fabrication. Notably, we achieve these results in a near-identical device as used for highly reproducible, high-fidelity electron spin qubits. With isotopic purification and further device-level optimisations, silicon hole spin qubits are poised to unlock a new operation regime for quantum CMOS architectures.

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Publication Details

Journal
Nature Communications
Published
2026-08-27
DOI
https://doi.org/10.1038/s41467-026-76231-x
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Precision high-speed quantum logic with holes on a natural silicon foundry platform

Clément Godfrin, Bart Raes, Chih Hwan Yang, A. R. Hamilton et al.
Nature Communications
Quantum and electron transport phenomena
article

Precision high-speed quantum logic with holes on a natural silicon foundry platform

Clément Godfrin, Bart Raes, Chih Hwan Yang, A. R. Hamilton, Andrew S. Dzurak, Julien Jussot, Kristiaan De Greve, Jonathan Huang, S. D. Liles, Nard Dumoulin Stuyck, Will Gilbert, Sofie Beyne, Ruoyu Li, Stefan Kubicek, Isaac Vorreiter, Danny Wan, Joe Hillier, Sugandha Sharma
article en

Abstract

Abstract Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst retaining the salient features of a quantum dot qubit architecture. However, silicon hole spin qubits are not as advanced as electrons, due to increased susceptibility to disorder and more complex spin physics. Here we demonstrate single-qubit gate fidelities up to 99.8% and a two-qubit gate quality factor of 240, indicating a physical fidelity limit of 99.7%. These results represent the highest performance reported in natural silicon to date, made possible by fast qubit control, exchange pulsing, and industrial-grade fabrication. Notably, we achieve these results in a near-identical device as used for highly reproducible, high-fidelity electron spin qubits. With isotopic purification and further device-level optimisations, silicon hole spin qubits are poised to unlock a new operation regime for quantum CMOS architectures.

Nature Communications
UNSW Sydney (AU), IMEC (BE), KU Leuven (BE)
Australian Government, Australian Research Council, Army Research Office
Openalex Percentile: Top 97%
Quantum and electron transport phenomena
DOIOpen Access PDFOpenAlex
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