Electron Irradiation Impact on Silicon Schottky Diode

Au/n-Si/Au-Sb Schottky diode was fabricated, and electron irradiation was applied to the diode at 25 and 50 gray doses. The effects of irradiation on the electrical characteristics of the diode were analyzed by means of current-voltage, capacitance-voltage, conductance-voltage, and capacitance-frequency measurements before and after irradiation. With increasing irradiation dose, changes were observed in the ideality factor, barrier height, interface states, series resistance, dielectric constant, and diffusion potential values. The n value was found to be 1.231, 1.306, and 1.350 before, for 25-gray, and 50-gray irradiation, respectively. The value of Φb was 0.742 eV, before irradiation. Depending on 25 and 50 gray irradiations, it was calculated as 0.768 and 0.761 eV, respectively. It has been observed that the diode deviates from ideality due to defects in the diode interface depending on irradiation. Furthermore, it has been observed that electron irradiation causes changes in the electrical properties of the Au/n-Si/Au-Sb Schottky diode.