(K,Na)NbO <sub>3</sub> ‐based relaxor ferroelectric thin film for energy storage

Abstract Ferroelectric energy storage research is a hot topic of today. Based on the requirements of microdevice development and environmental protection, it has become a challenge to develop high‐performance lead‐free ferroelectric films for energy storage. In this study, a lead‐free 0.95(K 0.49 Na 0.49 Li 0.02 )(Nb 0.8 Ta 0.2 )O 3 –0.05CaZrO 3 (KNNLT‐CZ) film was epitaxially grown on Nb:SrTiO 3 (001) substrate by pulsed laser deposition. The film exhibits relaxor ferroelectric characteristics and possesses an excellent energy storage density ( W tot ) of 33.26 J/cm 3 and recoverable energy storage density ( W rec ) of 25.13 J/cm 3 ; the energy storage efficiency exceeds 75% with a maximum of 93.8%. Furthermore, the film maintains stable performance within a temperature range of 25°C–175°C and a frequency range of 1–10 kHz, and shows a high fatigue resistance after 10 6 cycles. Transmission electron microscopy (TEM) image proves the existence of polar nano‐domains in the film, which are unique to relaxor ferroelectrics. This study presents that KNN‐based films are expected to be candidates for future lead‐free energy storage.

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Publication Details

Journal
Journal of the American Ceramic Society
Published
2025-11-21
DOI
https://doi.org/10.1111/jace.70375
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
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article

(K,Na)NbO 3 ‐based relaxor ferroelectric thin film for energy storage

Teng Li, Liqiang Xu, Yuxuan Yang, Hao Zhuo et al.
Journal of the American Ceramic Society
Ferroelectric and Piezoelectric Materials
article

(K,Na)NbO 3 ‐based relaxor ferroelectric thin film for energy storage

Teng Li, Liqiang Xu, Yuxuan Yang, Hao Zhuo, Feng Chen, Yi‐Wen Liu, Juan Zhang, Shudong Hu, Botao Shao
article en

Abstract

Abstract Ferroelectric energy storage research is a hot topic of today. Based on the requirements of microdevice development and environmental protection, it has become a challenge to develop high‐performance lead‐free ferroelectric films for energy storage. In this study, a lead‐free 0.95(K 0.49 Na 0.49 Li 0.02 )(Nb 0.8 Ta 0.2 )O 3 –0.05CaZrO 3 (KNNLT‐CZ) film was epitaxially grown on Nb:SrTiO 3 (001) substrate by pulsed laser deposition. The film exhibits relaxor ferroelectric characteristics and possesses an excellent energy storage density ( W tot ) of 33.26 J/cm 3 and recoverable energy storage density ( W rec ) of 25.13 J/cm 3 ; the energy storage efficiency exceeds 75% with a maximum of 93.8%. Furthermore, the film maintains stable performance within a temperature range of 25°C–175°C and a frequency range of 1–10 kHz, and shows a high fatigue resistance after 10 6 cycles. Transmission electron microscopy (TEM) image proves the existence of polar nano‐domains in the film, which are unique to relaxor ferroelectrics. This study presents that KNN‐based films are expected to be candidates for future lead‐free energy storage.

Journal of the American Ceramic SocietyVol. 109(1)
University of Science and Technology of China (CN), Anhui University (CN), High Magnetic Field Laboratory (CN), Xi'an Jiaotong University (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences
Openalex Percentile: Top 71%
Ferroelectric and Piezoelectric Materials
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(K,Na)NbO <sub>3</sub> ‐based relaxor ferroelectric thin film for energy storage — Teng Li, Liqiang Xu, et al. · Journal of the American Ceramic Society (2025) | TGRS Research Map | TGRS