Se induced CdTe solar cell: A simulated study on structure and properties

• The utility and deficiencies of this solar cell have been analyzed by comparing them with standard CdS / CdTe solar cell results. • When a fully interdiffused CdTeSe composite absorber layer (100 nm) is used, the inner grain photoconductivity is substantial, which enhances the VOC and ƞ. • Inserting a very thin CdS layer in the FTO/CdTeSe layer changes the photoinactive region of the FTO/CdTeSe interface to the photoactive region. As a result, the improvement of V OC can be observed due to the reduced recombination. Se alloying CdTe absorber brings a lot of potential to the solar cell industry. The optical properties and electronic structures of this CdTeSe/CdTe composite absorber solar cell are discussed in detail by simulation. The V OC and cell efficiency ̞ are increased when a fully interdiffused CdTeSe composite absorber layer (100 nm) gets used because of the substantial inner grain photoconductivity. The functionality of the solar cell is significantly impacted as the thickness of CdSe grows. It has been observed that a residual photoinactive CdSe layer negatively affects solar performance. The photoinactive part of the FTO/CdTeSe interface becomes the photoactive part when a very thin layer of CdS is inserted into the FTO/CdTeSe layer. Since the reduced bandgap of the CdTe1-xSex layer reduces the solar cell VOC, a very thin CdS layer has been used between the FTO and the CdTe1-xSex layer to minimise the damage. In this case, the factors responsible for the highest I SC (0.363 Amp), V OC (0.6475), FF (78.8%) and conversion efficiency (18.39%) are discussed in the present study .