Low-voltage ferroelectric field-effect transistors with ultrathin aluminum scandium nitride and 2D channels

<h2>Summary</h2> CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large-scale data processing and multivariable optimization. Ferroelectric materials offer solutions through enabling dual-purpose memory units that perform both storage and logic operations. In this study, we demonstrate ferroelectric field-effect transistors (FeFETs) with two-dimensional (2D) molybdenum disulfide (MoS₂) channels fabricated on ultrathin 5- and 10-nm ferroelectric aluminum scandium nitride (Al₁₋_xSc_xN). By decreasing the thickness of the ferroelectric film, we reduced the gate voltages (<3 V) required to switch the device conductance, enabling low-voltage operation. We observe a crossover in hysteresis behavior that varies with film thickness, channel fabrication method, and environmental conditions. Through an investigation of multiple parameters, including fabrication, scandium content, and dimensional scaling, we provide pathways to improve device performance.