Unveiling the capacitance overestimation of a HfO <sub>2</sub> –ZrO <sub>2</sub> solid solution at the morphotropic phase boundary
A comprehensive electrical analysis reveals that the dielectric constant of HfO 2 -based thin film capacitors at the morphotropic phase boundary has been overestimated.
Authors
- Taehwan Moon (ORCID: https://orcid.org/0000-0003-1197-6677)
- Jae Sung Yun (ORCID: https://orcid.org/0000-0002-1882-7052)
- S.S. Kim
- Woojin Jeon (ORCID: https://orcid.org/0000-0002-8477-9124)
Institutions
- Kyung Hee University (KR)
- Ajou University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-11-21
- DOI
- https://doi.org/10.1039/d5tc02886h
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00