Abnormal Enhancement for the Conductance of Borophene Lateral Heterostructures

ABSTRACT The study on the transport properties of borophenes is scarce, which is important for their potential applications in electronic and sensing devices. The study suggests the holes tend to suppress the conductance of borophenes in zigzag direction, though they all behave much better than graphene. Surprisingly, inserting a row of borophene into borophene will abnormally enhance the conductance up to three times under certain bias. The charge transfer between and subunits leads to the shift of bands, as a result, the Fermi level is dominated by the bands from subunit with more anisotropic Fermi surface and higher Fermi velocities. Furthermore, Fermi surface analysis suggests the bands across the interface is scarce or absent. Combined with high electrostatic potential on subunit and small fluctuation of electron transfer in subunits, quasi‐1D transport appears, accounting for the abnormal enhancement in conductance. Given many nearly degenerate allotropes for borophene, the abnormal enhancement is likely observable in other family of lateral heterostructures as well. This study not only elucidates an anomalous conductance enhancement in specific borophene heterostructures, but also proposes a way to enhance the conductance in lateral heterostructures via band tailoring.