Bandgap Engineering of CIGS: Active Control of Composition Gradient
The tunable bandgap of CIGSe has established bandgap engineering as a pivotal research direction for advancing the efficiency frontiers of solar cells. In particular, the proposal of the V-shaped bandgap gradient has motivated extensive efforts to achieve precise control over elemental composition and spatial distribution within the absorber layer. Against this backdrop, this review systematically classifies active control strategies—such as surface sulfurization, Ga grading, and Ag alloying—according to their doping mechanisms and the resulting bandgap profiles. It further evaluates emerging profiles, including the “hockey-stick” distribution, against the conventional V-shaped benchmark, and explores future pathways for bandgap engineering in next-generation, high-efficiency photovoltaic devices. Further improvements in photovoltaic efficiency can effectively boost power generation and lower solar power costs, providing a practical solution to future energy and environmental challenges.
Authors
- Jiajia Zhou (ORCID: https://orcid.org/0009-0005-5227-4833)
- Shengye Tao (ORCID: https://orcid.org/0000-0001-6211-3818)
- Qianming Gong (ORCID: https://orcid.org/0000-0003-0929-7026)
- Maria Baranova
- Junsu Han (ORCID: https://orcid.org/0009-0002-7784-0852)
- Daming Zhuang (ORCID: https://orcid.org/0000-0001-7393-2448)
- Zhihao Wu
- Ming Zhao (ORCID: https://orcid.org/0009-0001-8379-7021)
- Mengyao Jia
Institutions
- Ministry of Education (TW)
- Tsinghua University (CN)
Publication Details
- Journal
- Energies
- Published
- 2025-11-21
- DOI
- https://doi.org/10.3390/en18236089
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- State Key Laboratory of New Ceramics and Fine Processing
- National Key Research and Development Program of China