A simple description of the carrier relaxation dynamics involved in the temperature-dependent optical measurements of III-V quantum dot (QD) structures

• Self-assembled Quantum dots. • Continuous-mode of photoexcitation. • Carrier relaxation dynamics. • Rate-equation models. • Optical investigations as a function of temperature and laser power density. The work presented here focuses on the carrier relaxation dynamics involved in the temperature-dependent photoluminescence (PL) intensity from continuous-mode photoexcitation of QD structures. The standard motions of the photo-generated carriers were explained by a first-order development of the carrier concentration within the optically active states of the system. Under steady-state conditions, a simple rate-equation model is used to describe the temperature-dependent evolution of the quantum dot PL intensity. The fit of the experimental PL data by the proposed model was examined for several excitation power densities. The fitting results were compared with those obtained with the conventional Arrhenius formula.