Nonvolatile electrical switching of nonreciprocal transport in ferroelectric polar metal WTe2

Nonreciprocal charge transport in junction-free devices has gained strong research interest recently, due to its capabilities to reveal new quantum physics and potential in outperforming traditional junction-based nonreciprocal devices. While nonreciprocal transport has been reported in a wide range of materials due to various exotic physics, the direction of nonreciprocity is mostly fixed. A key capability that has not been established is the active control of the direction of nonreciprocity. Here by taking advantage of the unique and intrinsic coexistence of switchable ferroelectricity and magnetochiral anisotropy in few-layer polar metal WTe<sub>2</sub>, we demonstrate nonvolatile electrical switching of nonreciprocal transport. The direction of nonreciprocal transport is reversed upon electrical switching of the ferroelectric polarization, and the switching is nonvolatile, i.e., it can be maintained even without external voltages. The nonreciprocal transport in few-layer WTe<sub>2</sub> is also highly tunable with electrostatic doping. Theoretical calculations reveal a nontrivial Drude-like mechanism for the reciprocity, with significant band geometrical contribution due to interband coherence. The demonstration of nonvolatile electrically switchable nonreciprocal transport provides a novel route to switch topological quantum physics and paves the way to programmable junction-free diodes.

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Publication Details

Journal
Nature Communications
Published
2025-11-21
DOI
https://doi.org/10.1038/s41467-025-66464-7
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Nonvolatile electrical switching of nonreciprocal transport in ferroelectric polar metal WTe2

Shengyuan A. Yang, Cong Xiao, Hui Wang, Xiaoxu Zhao et al.
Nature Communications
2D Materials and Applications
article

Nonvolatile electrical switching of nonreciprocal transport in ferroelectric polar metal WTe2

Shengyuan A. Yang, Cong Xiao, Hui Wang, Xiaoxu Zhao, Xiao Renshaw Wang, Xin Chen, Peng Song, Haoyun Chen, Jin Cao, Ziyi Han, B. Liu, Zherui Yang, Ruihan Wang
article en

Abstract

Nonreciprocal charge transport in junction-free devices has gained strong research interest recently, due to its capabilities to reveal new quantum physics and potential in outperforming traditional junction-based nonreciprocal devices. While nonreciprocal transport has been reported in a wide range of materials due to various exotic physics, the direction of nonreciprocity is mostly fixed. A key capability that has not been established is the active control of the direction of nonreciprocity. Here by taking advantage of the unique and intrinsic coexistence of switchable ferroelectricity and magnetochiral anisotropy in few-layer polar metal WTe<sub>2</sub>, we demonstrate nonvolatile electrical switching of nonreciprocal transport. The direction of nonreciprocal transport is reversed upon electrical switching of the ferroelectric polarization, and the switching is nonvolatile, i.e., it can be maintained even without external voltages. The nonreciprocal transport in few-layer WTe<sub>2</sub> is also highly tunable with electrostatic doping. Theoretical calculations reveal a nontrivial Drude-like mechanism for the reciprocity, with significant band geometrical contribution due to interband coherence. The demonstration of nonvolatile electrically switchable nonreciprocal transport provides a novel route to switch topological quantum physics and paves the way to programmable junction-free diodes.

Nature CommunicationsVol. 16(1)
Hong Kong Polytechnic University (HK), Singapore University of Technology and Design (SG), Singapore Institute of Technology (SG), Nanyang Technological University (SG), Peking University (CN), Fudan University (CN), Singapore Management University (SG)
Nanyang Technological University, National Natural Science Foundation of China, Fudan University, Hong Kong Polytechnic University, Ministry of Education, India, Bộ Giáo dục và Ðào tạo
Openalex Percentile: Top 71%
2D Materials and Applications
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