Numerical investigation of CdS/CdTe thin-film solar cells using SCAPS-1D: Influence of layer thickness and temperature on device performance
This study presents a comprehensive numerical investigation of CdS/CdTe thin-film solar cells using SCAPS-1D. The impact of the absorber (CdTe) and buffer (CdS) layer thicknesses, as well as the operating temperature, on key photovoltaic parameters namely open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) is systematically analyzed. The results indicate that optimal performance is achieved with a CdTe thickness of 2.5–3.0 μm and a CdS buffer of 10–20 nm. Additionally, device performance slightly degrades at elevated temperatures due to enhanced recombination and carrier mobility reduction. This simulation framework provides predictive guidance for improving real-world CdS/CdTe devices and aligns closely with recent experimental findings.
Authors
- Said Dlimi (ORCID: https://orcid.org/0000-0002-3086-5430)
- Fahd Elmourabit
- Yassine Essakali (ORCID: https://orcid.org/0009-0007-0131-2275)
Institutions
- Chouaib Doukkali University (MA)
Publication Details
- Journal
- Hybrid Advances
- Published
- 2025-11-21
- DOI
- https://doi.org/10.1016/j.hybadv.2025.100582
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.73