Computational evaluation of scandium decorated boron oxide monolayer as reversible hydrogen storage medium
Two-dimensional (2D) materials with a high surface-to-volume ratio and excellent electronic properties have been extensively used as hydrogen (H 2 ) storage mediums. In this study, the first-principles calculations have been implemented to explore the structural, electronic and H 2 storage performance of recently synthesized boron monoxide (BO) monolayer decorated with the scandium (Sc) dopants. It is found that doping with three Sc atoms, resulting in the formation of 3Sc@BO material, changes the electronic properties of BO from semiconducting to conducting. The Sc dopants are bonded with the BO in the form of Sc–O bonds with significantly strong binding energies of −4.628, −4.708 and −4.323 eV/Sc, for Sc@BO, 2Sc@BO, and 3Sc@BO, respectively. Thermal stability of the 3Sc@BO system is verified through ab initio molecular dynamics (AIMD) simulations. The H 2 molecules adsorbed on 3Sc@BO are polarized and exhibit the obvious hybridization between H 2 and Sc. Under maximum hydrogenation, the 3Sc@BO could adsorb to a maximum of 19H 2 molecules, resulting in a high storage capacity of 10.96 wt%, and the average adsorption energy is −0.35 eV/H 2 . The adsorption of H 2 on 3Sc@BO is elaborated as a synergistic collaborative amalgamation of physical and chemical adsorption mechanisms. Furthermore, relative energy analysis indicates that H 2 molecules remain adsorbed on 3Sc@BO at 298.15 K and moderate pressures, and the desorption occurs at temperatures above 319 K. Our findings reveal the potential of 3Sc@BO as a high-capacity H 2 storage material. • Synthesized boron monoxide (BO) monolayer investigated as a potential hydrogen (H 2 ) storage material. • BO functionalized with transition metals (Sc, V, Fe) to enhance hydrogen storage performance. • Thermal and structural stability confirmed using ab initio molecular dynamics (AIMD) simulations. • Scandium (Sc) doping gave the highest H 2 storage capacity with exceptional hydrogen uptake.
Authors
- Xihao Chen (ORCID: https://orcid.org/0000-0001-5580-5656)
- Tanveer Hussain (ORCID: https://orcid.org/0000-0003-1973-4584)
- Longxin Zhang (ORCID: https://orcid.org/0000-0002-1285-5634)
- Syed Faraz Hasan (ORCID: https://orcid.org/0009-0006-5345-2790)
- He Xinyu
Institutions
- Chongqing University of Arts and Sciences (CN)
- University of New England (AU)
Publication Details
- Journal
- International Journal of Hydrogen Energy
- Published
- 2025-11-20
- DOI
- https://doi.org/10.1016/j.ijhydene.2025.152597
- Citations
- 2
- Primary Topic
- Hydrogen Storage and Materials
- Type
- article
- Field-Weighted Citation Impact
- 1.04