Elucidating and decoupling diverse fatigue mechanisms toward static self-recovery in ZrO2-based antiferroelectrics

ZrO2-based antiferroelectric (AFE) materials exhibit superior endurance compared to HfO2-based ferroelectrics, making them promise for nanoelectronics. Nonetheless, their endurance properties remain insufficient for dynamic random-access memory applications. In this respect, the fundamental physical mechanisms underlying polarization fatigue and the intrinsic constraints on self-recovery remain poorly understood, yet they are pivotal for achieving fatigue-free operation. Here, we systematically decouple the multiple fatigue mechanisms in ZrO2-based AFE capacitors and introduce a static self-recovery (SSR) method that significantly improves endurance. We present a three level traps model, developed by electrical measurements and first-principles calculations, that successfully describes the shallow/deep fatigue of ZrO2-based AFE materials and their SSR processes. Moreover, the SSR effect can be significantly enhanced by optimizing the combination of break time and cycling unit. The proposed SSR methodology offers a viable solution to the endurance challenges of AFE random-access memory in practical applications, paving the way for high-endurance, energy-efficient memory technologies with enhanced functional versatility. ZrO2-based antiferroelectric materials hold promise for nanoelectronics due to their superior endurance, yet their performance in dynamic random-access memory remains limited by polarization fatigue. Here, the authors decouple fatigue mechanisms and introduce a static self-recovery method, significantly enhancing endurance and offering a pathway to high-endurance, energy-efficient memory technologies.