FACAM: Design and Optimization of A Compact Energy Efficient FeFET-Based Analog Content Addressable Memory

Content Addressable Memory (CAM) is known for highly parallel pattern matching capability, which is widely used for data-centric applications and advanced machine learning models that involve associative search tasks. However, most state-of-the-art CAM designs focus on binary/multi-bit CAMs (B/MCAMs) based on CMOS or emerging nonvolatile memories (NVMs), which struggle in scenarios where analog values, rather than discrete levels, need to be stored and searched. Therefore, analog CAMs (ACAMs) offer a promising solution to further increase memory density, improve energy efficiency and extend practical scenarios. Among NVMs, ferroelectric field effect transistors (FeFETs) have emerged as a strong candidate for efficient CAM designs due to the three-terminal structure, high on-off ratio, high OFF resistance and voltage-driven write/read mechanisms. In this paper, we propose FACAM, a compact and energy efficient single-input 2FeFET-1T ACAM cell design, with a two-phase search scheme, that sets the location and width of the matching range through two FeFETs, respectively. We further present a FACAM array which reduces the matchline (ML) voltage swing by shifting ML precharging into the in-cell search operations. We also propose an adaptive scheme to selectively early-terminate second search phase for further search energy optimization. Evaluation results suggest that our proposed FACAM achieves 8.39× and 2.94× energy efficiency compared with the state-of-the-art better 6T-2R ACAM and 2FeFET ACAM. Benchmarking results in deep random forest accelerator show that our approach is 2.14× faster and 7.82× energy efficient than 2FeFET ACAM.

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Published
2025-10-26
DOI
https://doi.org/10.1109/iccad66269.2025.11240794
Primary Topic
Ferroelectric and Negative Capacitance Devices
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article
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article

FACAM: Design and Optimization of A Compact Energy Efficient FeFET-Based Analog Content Addressable Memory

Ann Franchesca Laguna, Cheng Zhuo, Jiahao Cai, Xunzhao Yin et al.
Ferroelectric and Negative Capacitance Devices
article

FACAM: Design and Optimization of A Compact Energy Efficient FeFET-Based Analog Content Addressable Memory

Ann Franchesca Laguna, Cheng Zhuo, Jiahao Cai, Xunzhao Yin, Yuxiao Yang, Thomas Kämpfe, Yan Zhang, Zeyu Yang
article en

Abstract

Content Addressable Memory (CAM) is known for highly parallel pattern matching capability, which is widely used for data-centric applications and advanced machine learning models that involve associative search tasks. However, most state-of-the-art CAM designs focus on binary/multi-bit CAMs (B/MCAMs) based on CMOS or emerging nonvolatile memories (NVMs), which struggle in scenarios where analog values, rather than discrete levels, need to be stored and searched. Therefore, analog CAMs (ACAMs) offer a promising solution to further increase memory density, improve energy efficiency and extend practical scenarios. Among NVMs, ferroelectric field effect transistors (FeFETs) have emerged as a strong candidate for efficient CAM designs due to the three-terminal structure, high on-off ratio, high OFF resistance and voltage-driven write/read mechanisms. In this paper, we propose FACAM, a compact and energy efficient single-input 2FeFET-1T ACAM cell design, with a two-phase search scheme, that sets the location and width of the matching range through two FeFETs, respectively. We further present a FACAM array which reduces the matchline (ML) voltage swing by shifting ML precharging into the in-cell search operations. We also propose an adaptive scheme to selectively early-terminate second search phase for further search energy optimization. Evaluation results suggest that our proposed FACAM achieves 8.39× and 2.94× energy efficiency compared with the state-of-the-art better 6T-2R ACAM and 2FeFET ACAM. Benchmarking results in deep random forest accelerator show that our approach is 2.14× faster and 7.82× energy efficient than 2FeFET ACAM.

Fraunhofer Institute for Photonic Microsystems (DE), De La Salle University (PH), Zhejiang University (CN)
Openalex Percentile: Top 65%
Ferroelectric and Negative Capacitance Devices
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