Observation of quasibound states in open quantum wells of cesiated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>p</mml:mi> </mml:math> -doped GaN surfaces

The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict the existence of metastable resonant states in this non confining potential with an intrinsic lifetime around 20 fs. Their experimental observation requires access to the empty conduction band of the cesiated semiconductor, which is possible with near-band gap photoemission spectroscopy. The energy distribution of the photoemitted electrons shows contributions coming from electrons accumulated into the resonant states at energies which agree with calculations.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2026-01-27
DOI
https://doi.org/10.1103/jmkv-pxy4
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Observation of quasibound states in open quantum wells of cesiated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>p</mml:mi> </mml:math> -doped GaN surfaces

Jacques Peretti, Jean-Philippe Banon, James S. Speck, Nicolas M. S. Lopes et al.
Physical review. B./Physical review. B
GaN-based semiconductor devices and materials
article

Observation of quasibound states in open quantum wells of cesiated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>p</mml:mi> </mml:math> -doped GaN surfaces

Jacques Peretti, Jean-Philippe Banon, James S. Speck, Nicolas M. S. Lopes, Mylène Sauty, Tanay Tak, Claude Weisbuch
article en

Abstract

The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict the existence of metastable resonant states in this non confining potential with an intrinsic lifetime around 20 fs. Their experimental observation requires access to the empty conduction band of the cesiated semiconductor, which is possible with near-band gap photoemission spectroscopy. The energy distribution of the photoemitted electrons shows contributions coming from electrons accumulated into the resonant states at energies which agree with calculations.

Physical review. B./Physical review. BVol. 113(8)
École Polytechnique (FR), University of California, Santa Barbara (US), Université Paris-Saclay (FR), Laboratoire Hubert Curien (FR), Service de Physique de l'État Condensé (FR), Laboratoire Charles Fabry (FR), Laboratoire de Physique Théorique de la Matière Condensée (FR), Institut Polytechnique de Paris (FR), Laboratoire de physique de la matière condensée (FR), Université Jean Monnet (FR)
National Science Foundation, U.S. Department of Energy, Agence Nationale de la Recherche, Office of Energy Efficiency and Renewable Energy, University of California, Santa Barbara, Solid State Lighting and Energy Electronics Center, University of California Santa Barbara, Office of Energy Efficiency
Openalex Percentile: Top 98%
GaN-based semiconductor devices and materials
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