Revolutionizing red micro-LEDs: Harnessing surface plasmons for enhanced efficiency

Red micro-LEDs (μ-LEDs) hold immense potential for next-generation displays, but their efficiency, particularly in smaller sizes, remains a significant challenge. To address this, we introduce a novel approach that leverages localized surface plasmon resonance (LSPR) to dramatically boost the performance of red μ-LEDs. Our strategy involves integrating rod-shaped Au nanoparticles into a precisely engineered nanohole pattern. By strategically placing these nanoparticles, we optimize LSPR coupling with the active region of the μ-LEDs, resulting in significant enhancements in light extraction efficiency and reduced radiative recombination rates. Furthermore, we employ a chemical treatment to effectively passivate surface defects, minimizing non-radiative recombination losses. This synergistic approach leads to a substantial increase in both optical output and electroluminescence intensity, pushing the boundaries of red μ-LED performance. The nanohole-patterned μ-LED chips achieve a ∼2.32-fold higher optical output at 50 A/cm2, along with an ∼8.96-fold higher electroluminescence, compared to the bare μ-LEDs. A lower lifetime of 0.348 ns for the nanohole-patterned μ-LEDs elucidates the fundamental mechanism of the novel approach with a high energy-coupling efficiency (67%) of the multi-quantum wells through the fast LSP channel. Our findings offer a promising pathway to realize highly efficient and compact red μ-LEDs, paving the way for advanced display technologies with superior brightness, color purity, and energy efficiency.

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Publication Details

Journal
Applied Physics Reviews
Published
2025-11-20
DOI
https://doi.org/10.1063/5.0256125
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

Revolutionizing red micro-LEDs: Harnessing surface plasmons for enhanced efficiency

Jong‐In Shim, Dong‐Soo Shin, Yong‐Ho Ra, Sunny Yadav et al.
Applied Physics Reviews
GaN-based semiconductor devices and materials
article

Revolutionizing red micro-LEDs: Harnessing surface plasmons for enhanced efficiency

Jong‐In Shim, Dong‐Soo Shin, Yong‐Ho Ra, Sunny Yadav, Sangjin Min, Seungjae Baek, Pil‐Kyu Jang, Vandung Dao, In‐Hwan Lee, S. J. Pearton, Sang‐Bum Kim, Taehwan Kim, Yeong-Hoon Cho, Periyayya Uthirakumar, Myung Soo Han, Il-Soo Kim
article en

Abstract

Red micro-LEDs (μ-LEDs) hold immense potential for next-generation displays, but their efficiency, particularly in smaller sizes, remains a significant challenge. To address this, we introduce a novel approach that leverages localized surface plasmon resonance (LSPR) to dramatically boost the performance of red μ-LEDs. Our strategy involves integrating rod-shaped Au nanoparticles into a precisely engineered nanohole pattern. By strategically placing these nanoparticles, we optimize LSPR coupling with the active region of the μ-LEDs, resulting in significant enhancements in light extraction efficiency and reduced radiative recombination rates. Furthermore, we employ a chemical treatment to effectively passivate surface defects, minimizing non-radiative recombination losses. This synergistic approach leads to a substantial increase in both optical output and electroluminescence intensity, pushing the boundaries of red μ-LED performance. The nanohole-patterned μ-LED chips achieve a ∼2.32-fold higher optical output at 50 A/cm2, along with an ∼8.96-fold higher electroluminescence, compared to the bare μ-LEDs. A lower lifetime of 0.348 ns for the nanohole-patterned μ-LEDs elucidates the fundamental mechanism of the novel approach with a high energy-coupling efficiency (67%) of the multi-quantum wells through the fast LSP channel. Our findings offer a promising pathway to realize highly efficient and compact red μ-LEDs, paving the way for advanced display technologies with superior brightness, color purity, and energy efficiency.

Applied Physics ReviewsVol. 12(4)
University of Seoul (KR), Korea University (KR), Center for NanoScience (DE), LG (United States) (US), University of Florida (US), Seoul Semiconductor (South Korea) (KR), Hanyang University (KR), Jeonbuk National University (KR)
Openalex Percentile: Top 78%
GaN-based semiconductor devices and materials
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