Revolutionizing red micro-LEDs: Harnessing surface plasmons for enhanced efficiency
Red micro-LEDs (μ-LEDs) hold immense potential for next-generation displays, but their efficiency, particularly in smaller sizes, remains a significant challenge. To address this, we introduce a novel approach that leverages localized surface plasmon resonance (LSPR) to dramatically boost the performance of red μ-LEDs. Our strategy involves integrating rod-shaped Au nanoparticles into a precisely engineered nanohole pattern. By strategically placing these nanoparticles, we optimize LSPR coupling with the active region of the μ-LEDs, resulting in significant enhancements in light extraction efficiency and reduced radiative recombination rates. Furthermore, we employ a chemical treatment to effectively passivate surface defects, minimizing non-radiative recombination losses. This synergistic approach leads to a substantial increase in both optical output and electroluminescence intensity, pushing the boundaries of red μ-LED performance. The nanohole-patterned μ-LED chips achieve a ∼2.32-fold higher optical output at 50 A/cm2, along with an ∼8.96-fold higher electroluminescence, compared to the bare μ-LEDs. A lower lifetime of 0.348 ns for the nanohole-patterned μ-LEDs elucidates the fundamental mechanism of the novel approach with a high energy-coupling efficiency (67%) of the multi-quantum wells through the fast LSP channel. Our findings offer a promising pathway to realize highly efficient and compact red μ-LEDs, paving the way for advanced display technologies with superior brightness, color purity, and energy efficiency.
Authors
- Jong‐In Shim (ORCID: https://orcid.org/0000-0002-1305-074X)
- Dong‐Soo Shin (ORCID: https://orcid.org/0000-0002-0863-9138)
- Yong‐Ho Ra (ORCID: https://orcid.org/0000-0002-3303-136X)
- Sunny Yadav
- Sangjin Min (ORCID: https://orcid.org/0000-0002-6950-1001)
- Seungjae Baek (ORCID: https://orcid.org/0000-0002-2512-059X)
- Pil‐Kyu Jang
- Vandung Dao
- In‐Hwan Lee (ORCID: https://orcid.org/0000-0003-4566-9181)
- S. J. Pearton (ORCID: https://orcid.org/0000-0001-6498-1256)
- Sang‐Bum Kim (ORCID: https://orcid.org/0000-0001-7460-3750)
- Taehwan Kim (ORCID: https://orcid.org/0000-0003-3929-7676)
- Yeong-Hoon Cho
- Periyayya Uthirakumar (ORCID: https://orcid.org/0000-0002-1112-4901)
- Myung Soo Han
- Il-Soo Kim
Institutions
- University of Seoul (KR)
- Korea University (KR)
- Center for NanoScience (DE)
- LG (United States) (US)
- University of Florida (US)
- Seoul Semiconductor (South Korea) (KR)
- Hanyang University (KR)
- Jeonbuk National University (KR)
Publication Details
- Journal
- Applied Physics Reviews
- Published
- 2025-11-20
- DOI
- https://doi.org/10.1063/5.0256125
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00