Electric field-tunable ferromagnetism in a van der Waals semiconductor up to room temperature

Ferromagnetic semiconductors, coupling charge transport and magnetism via electrical means, show great promise for spin-based logic devices. Despite decades of efforts to achieve such co-functionality, maintaining ferromagnetic order at room temperature remains elusive. Here, we address this long-standing challenge by implanting dilute Co atoms into few-layer black phosphorus through atomically-thin boron nitride diffusion barrier. Our Co-doped black phosphorus-based devices exhibit ferromagnetism up to room temperature while preserving its high mobility (~ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msup><mml:mrow><mml:mn>1000</mml:mn> <mml:mi>cm</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msup> <mml:msup><mml:mrow><mml:mi>V</mml:mi></mml:mrow> <mml:mrow><mml:mo>-</mml:mo> <mml:mn>1</mml:mn></mml:mrow> </mml:msup> <mml:msup><mml:mrow><mml:mi>s</mml:mi></mml:mrow> <mml:mrow><mml:mo>-</mml:mo> <mml:mn>1</mml:mn></mml:mrow> </mml:msup> </mml:math> ) and semiconducting characteristics. By incorporating ferromagnetic Co-doped black phosphorus into magnetic tunnel junction devices, we demonstrate a large tunnelling magnetoresistance that extends up to room temperature. This study presents a new approach to engineering ferromagnetic ordering in otherwise nonmagnetic materials, thereby expanding the repertoire and applications of magnetic semiconductors envisioned thus far.

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Publication Details

Journal
Nature Communications
Published
2025-11-20
DOI
https://doi.org/10.1038/s41467-025-59961-2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Electric field-tunable ferromagnetism in a van der Waals semiconductor up to room temperature

Deyi Fu, Ahmet Avşar, Vitor M. Pereira, Gunasheel Kauwtilyaa Krishnaswamy et al.
Nature Communications
2D Materials and Applications
article

Electric field-tunable ferromagnetism in a van der Waals semiconductor up to room temperature

Deyi Fu, Ahmet Avşar, Vitor M. Pereira, Gunasheel Kauwtilyaa Krishnaswamy, Sergey Grebenchuk, Takashi Taniguchi, Fuchen Hou, Kenji Watanabe, Junhao Lin, Tingyu Qu, Maciej Koperski, Kostya S. Novoselov, Anjan Soumyanarayanan, N.L. Yakovlev, Oleg V. Yazyev, Y. X. Jie, Barbaros Oezyilmaz, Jiawei Liu, Xiao Chang, Johan Félisaz
article en

Abstract

Ferromagnetic semiconductors, coupling charge transport and magnetism via electrical means, show great promise for spin-based logic devices. Despite decades of efforts to achieve such co-functionality, maintaining ferromagnetic order at room temperature remains elusive. Here, we address this long-standing challenge by implanting dilute Co atoms into few-layer black phosphorus through atomically-thin boron nitride diffusion barrier. Our Co-doped black phosphorus-based devices exhibit ferromagnetism up to room temperature while preserving its high mobility (~ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msup><mml:mrow><mml:mn>1000</mml:mn> <mml:mi>cm</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msup> <mml:msup><mml:mrow><mml:mi>V</mml:mi></mml:mrow> <mml:mrow><mml:mo>-</mml:mo> <mml:mn>1</mml:mn></mml:mrow> </mml:msup> <mml:msup><mml:mrow><mml:mi>s</mml:mi></mml:mrow> <mml:mrow><mml:mo>-</mml:mo> <mml:mn>1</mml:mn></mml:mrow> </mml:msup> </mml:math> ) and semiconducting characteristics. By incorporating ferromagnetic Co-doped black phosphorus into magnetic tunnel junction devices, we demonstrate a large tunnelling magnetoresistance that extends up to room temperature. This study presents a new approach to engineering ferromagnetic ordering in otherwise nonmagnetic materials, thereby expanding the repertoire and applications of magnetic semiconductors envisioned thus far.

Nature CommunicationsVol. 16(1)
Agency for Science, Technology and Research (SG), National University of Singapore (SG), Universidade do Porto (PT), Xiamen University (CN), National Institute for Materials Science (JP), Southern University of Science and Technology (CN), Shenzhen Bay Laboratory (CN), Institute of Materials Research and Engineering (SG), École Polytechnique Fédérale de Lausanne (CH)
National Science Foundation, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, National Natural Science Foundation of China, Ministry of Education, India, Development and Reform Commission of Shenzhen Municipality, Southern University of Science and Technology
Openalex Percentile: Top 72%
2D Materials and Applications
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