Advancing 2D CMOS electronics with high-performance p-type transistors
Two-dimensional (2D) semiconductors have emerged as promising candidates for enabling complementary metal-oxide-semiconductor (CMOS) technology in post-silicon electronics. However, a significant performance gap between 2D p-type and n-type transistors hampers their immediate industrial application. In this Comment, we discuss recent advances in high-performance 2D p-type transistors, outline a roadmap for their potential development, and propose benchmark performance metrics to guide future progress. The performance of p-type transistors based on 2D semiconductors has not yet reached the level required for the realization of competitive complementary metal-oxide-semiconductor (CMOS) circuits. In this Comment, the authors discuss the recent developments, current challenges, and future outlook of 2D p-type transistors.
Authors
- Lin Xu (ORCID: https://orcid.org/0000-0003-1781-1638)
- Lain‐Jong Li (ORCID: https://orcid.org/0000-0002-4059-7783)
- Jing Kong (ORCID: https://orcid.org/0000-0003-0551-1208)
- Lian‐Mao Peng (ORCID: https://orcid.org/0000-0003-0754-074X)
- Yifan Liu (ORCID: https://orcid.org/0009-0006-1828-8817)
- Xudong Zheng (ORCID: https://orcid.org/0009-0009-3783-7617)
- Jianfeng Jiang
Institutions
- King University (US)
- University of California, Santa Barbara (US)
- National University of Singapore (SG)
- Peking University (CN)
- Massachusetts Institute of Technology (US)
Publication Details
- Journal
- Nature Communications
- Published
- 2025-11-20
- DOI
- https://doi.org/10.1038/s41467-025-66263-0
- Citations
- 1
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.52