Study of the neutron radiation hardness of MAPD-3NK2 silicon photomultipliers

The radiation hardness of MAPD-3NK2 photodiodes with deep-buried pixel structures was evaluated under neutron irradiation at fluences ranging from 3.6 × 10<sup>9</sup>to 3.6 × 10<sup>12</sup>n<sub>eq</sub>/cm². Irradiation induced dark current increase of up to 2060 times, a breakdown voltage shift of (0.37 ± 0.08) V, a photo signal amplitude reduction of (90.1 ± 0.4) %, and a tenfold degradation in amplitude resolution. Partial recovery was observed after 40 days of room-temperature annealing, with dark current decreasing by 35%.Similar performance changes were observed in photodiodes with artificially elevated dark current, indicating that excess current is the primary driver of degradation. This current likely impedes photoelectron detection by occupying pixels or failing to fully quench the avalanche process, thereby reducing photocurrent.

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Publication Details

Journal
Scientific Reports
Published
2025-11-20
DOI
https://doi.org/10.1038/s41598-025-24759-1
Primary Topic
Radiation Detection and Scintillator Technologies
Type
article
Field-Weighted Citation Impact
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article

Study of the neutron radiation hardness of MAPD-3NK2 silicon photomultipliers

Yu. Shitov, Anže Jazbec, Z. Sadygov, G. Ahmadov et al.
Scientific Reports
Radiation Detection and Scintillator Technologies
article

Study of the neutron radiation hardness of MAPD-3NK2 silicon photomultipliers

Yu. Shitov, Anže Jazbec, Z. Sadygov, G. Ahmadov, O. Okhrimenko, F. Ahmadov, M. Holík, A. Sadygov, R. Akbarov, S. Nuruyev, Klemen Ambrožič, Yu. Yu. Bacherikov, A. Mammadli, F. Mamadov
article en

Abstract

The radiation hardness of MAPD-3NK2 photodiodes with deep-buried pixel structures was evaluated under neutron irradiation at fluences ranging from 3.6 × 10<sup>9</sup>to 3.6 × 10<sup>12</sup>n<sub>eq</sub>/cm². Irradiation induced dark current increase of up to 2060 times, a breakdown voltage shift of (0.37 ± 0.08) V, a photo signal amplitude reduction of (90.1 ± 0.4) %, and a tenfold degradation in amplitude resolution. Partial recovery was observed after 40 days of room-temperature annealing, with dark current decreasing by 35%.Similar performance changes were observed in photodiodes with artificially elevated dark current, indicating that excess current is the primary driver of degradation. This current likely impedes photoelectron detection by occupying pixels or failing to fully quench the avalanche process, thereby reducing photocurrent.

Scientific ReportsVol. 15(1)
Khazar University (AZ), University of Ljubljana (SI), Jožef Stefan Institute (SI), Azerbaijan Scientific-Research & Design-Prospecting Power Engineering Institute (AZ), Institute of General and Inorganic Chemistry (BG), V.E. Lashkaryov Institute of Semiconductor Physics (UA), Ministry of Science and Education Republic of Azerbaijan (AZ), Azerbaijan University of Architecture and Construction (AZ), National Nuclear Research Center (AZ), Palladin Institute of Biochemistry (UA), Czech Technical University in Prague (CZ), University of West Bohemia in Pilsen (CZ)
European Commission
Openalex Percentile: Top 55%
Radiation Detection and Scintillator Technologies
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