Ultrathin boron-doped diamond – surface-wave-plasma synthesis of semi-conductive nanocrystalline boron-doped diamond layers at low temperature
Ultrathin boron-doped diamond layers, synthesized at 500 °C, provide a cost-effective, energy-efficient material with moderate semi-conductive properties for advanced functional uses.
Authors
- Ladislav Fekete (ORCID: https://orcid.org/0000-0002-8548-2613)
- Petr Ashcheulov (ORCID: https://orcid.org/0000-0001-8085-3609)
- Alexander Kovalenko (ORCID: https://orcid.org/0000-0002-7194-1874)
- Jaromı́r Kopeček (ORCID: https://orcid.org/0000-0002-9337-4639)
- Zdeněk Weiss (ORCID: https://orcid.org/0000-0001-7364-1325)
- Andrew Taylor (ORCID: https://orcid.org/0000-0002-5251-9301)
- Marina Davydova
- Pavel Hubı́k (ORCID: https://orcid.org/0000-0002-7321-8858)
Institutions
- Czech Academy of Sciences (CZ)
- Fraunhofer Institute for Applied Solid State Physics (DE)
- Institute of Physics of the Slovak Academy of Sciences (SK)
- Czech Technical University in Prague (CZ)
Publication Details
- Journal
- Materials Advances
- Published
- 2025-11-20
- DOI
- https://doi.org/10.1039/d5ma00238a
- Primary Topic
- Diamond and Carbon-based Materials Research
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Grantová Agentura České Republiky