Observation of Magnetic Structure‐Dependent Spin Hall Effect

Abstract The spin Hall effect (SHE) is a key mechanism for the generation of spin currents, driving the advancement of energy‐efficient spintronic devices. Spin current generation is influenced by multiple factors, making it challenging to distinguish the role of magnetization from structural factors. Therefore, the coexistence of diverse magnetic structures within the same crystal structure and atomic composition provides an ideal platform for such an investigation. In this work, a novel magnetic structure‐dependent spin Hall effect is demonstrated in Mn 5 Si 3 , which features both collinear and non‐collinear antiferromagnetic structures with the same crystal structure. Our findings reveal a significant enhancement in the spin Hall angle during the transition from collinear to non‐collinear antiferromagnetic structures, originating from the enhanced spin‐orbit coupling induced by the non‐collinear antiferromagnetic order in Mn 5 Si 3 . Furthermore, based on this magnetic structure‐dependent spin Hall effect, the efficiency of spin‐orbit torque switching of perpendicular magnetization is enhanced in the non‐collinear phase compared to the collinear one. This study advances the controllable spin sources and provides valuable insights into the construction of energy‐efficient spintronic devices.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-11-19
DOI
https://doi.org/10.1002/adfm.202505406
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00

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article

Observation of Magnetic Structure‐Dependent Spin Hall Effect

Feng Pan, Xiaoyu Feng, Cheng Song, Hua Bai et al.
Advanced Functional Materials
Magnetic properties of thin films
article

Observation of Magnetic Structure‐Dependent Spin Hall Effect

Feng Pan, Xiaoyu Feng, Cheng Song, Hua Bai, Yichi Zhang, Na Chen, Jiankun Dai, Xizhi Fu, Lei Han, Junwei Liu, Yiming Cao, Xiaolong Fan, Yuxiang Zhu, Shixuan Liang, Yingying Zhang
article en

Abstract

Abstract The spin Hall effect (SHE) is a key mechanism for the generation of spin currents, driving the advancement of energy‐efficient spintronic devices. Spin current generation is influenced by multiple factors, making it challenging to distinguish the role of magnetization from structural factors. Therefore, the coexistence of diverse magnetic structures within the same crystal structure and atomic composition provides an ideal platform for such an investigation. In this work, a novel magnetic structure‐dependent spin Hall effect is demonstrated in Mn 5 Si 3 , which features both collinear and non‐collinear antiferromagnetic structures with the same crystal structure. Our findings reveal a significant enhancement in the spin Hall angle during the transition from collinear to non‐collinear antiferromagnetic structures, originating from the enhanced spin‐orbit coupling induced by the non‐collinear antiferromagnetic order in Mn 5 Si 3 . Furthermore, based on this magnetic structure‐dependent spin Hall effect, the efficiency of spin‐orbit torque switching of perpendicular magnetization is enhanced in the non‐collinear phase compared to the collinear one. This study advances the controllable spin sources and provides valuable insights into the construction of energy‐efficient spintronic devices.

Advanced Functional MaterialsVol. 36(14)
Hong Kong University of Science and Technology (HK), Lanzhou University (CN), University of Hong Kong (HK), Tsinghua University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 72%
Magnetic properties of thin films
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