Experimental Observation of Spin Defects in the van der Waals Material GeS <sub>2</sub>

Spin defects in atomically thin two-dimensional (2D) materials are promising for quantum applications, particularly quantum sensing. The long coherence times of the spin defects enable high sensitivity in measurements of the fluctuations of the targeted physical parameters. However, the nuclear-spin bath remains a major source of decoherence. Here, we reveal the presence of optically addressable spin defects in germanium disulfide (β-GeS<sub>2</sub>) characterized by a wide bandgap and potential nuclear-spin-free lattice. Coherent control of the spin defects has been successfully demonstrated, and the coherence time <i>T</i><sub>2</sub> at 5 K can achieve tens of microseconds, 100 times that of a negatively charged boron vacancy (V<sub>B</sub><sup>-</sup>) in hexagonal boron nitride. An optical-spin defect pair model proposed recently has been used to explain their dynamics. Finally, we use density functional theory calculations to propose possible candidate structures for the spin defects.

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Publication Details

Journal
Nano Letters
Published
2025-11-10
DOI
https://doi.org/10.1021/acs.nanolett.5c03575
Citations
3
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.55
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article

Experimental Observation of Spin Defects in the van der Waals Material GeS 2

Jian‐Shun Tang, Jin‐Shi Xu, Chuan‐Feng Li, Lin-Ke Xie et al.
3 citations
Nano Letters
2D Materials and Applications
1.55
article

Experimental Observation of Spin Defects in the van der Waals Material GeS 2

Jian‐Shun Tang, Jin‐Shi Xu, Chuan‐Feng Li, Lin-Ke Xie, Guang-Can Guo, Xiaodong Zeng, Yuhang Ma, Nai‐Jie Guo, Ádám Gali, Zhaoan Wang, Yi‐Tao Wang, Song Li, Wei Liu, Jing Ren, Junyou Liu, Yaqi Wu, C.H. Ao
article en
3 citations

Abstract

Spin defects in atomically thin two-dimensional (2D) materials are promising for quantum applications, particularly quantum sensing. The long coherence times of the spin defects enable high sensitivity in measurements of the fluctuations of the targeted physical parameters. However, the nuclear-spin bath remains a major source of decoherence. Here, we reveal the presence of optically addressable spin defects in germanium disulfide (β-GeS<sub>2</sub>) characterized by a wide bandgap and potential nuclear-spin-free lattice. Coherent control of the spin defects has been successfully demonstrated, and the coherence time <i>T</i><sub>2</sub> at 5 K can achieve tens of microseconds, 100 times that of a negatively charged boron vacancy (V<sub>B</sub><sup>-</sup>) in hexagonal boron nitride. An optical-spin defect pair model proposed recently has been used to explain their dynamics. Finally, we use density functional theory calculations to propose possible candidate structures for the spin defects.

Nano LettersVol. 25(46)
University of Science and Technology of China (CN), Anhui University (CN), Budapest University of Technology and Economics (HU), Hefei University (CN), Quantum (Australia) (AU), HUN-REN Wigner Research Centre for Physics (HU), Momentum Research (US), Beijing Computational Science Research Center (CN), Beijing Academy of Quantum Information Sciences (CN)
Openalex Percentile: Top 16%
2D Materials and Applications
1.55
DOISourceOpenAlex
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