Metal–monolayer MoSi <sub>2</sub> N <sub>4</sub> junctions: metal dimension dependent Fermi-level pinning
High-performance semiconductor devices demand ohmic contacts with low contact resistances, while such low-resistance ohmic contacts are closely linked to the weak Fermi level pinning (FLP) effect.
Authors
- Junhui Tao
- Zhenjun Song (ORCID: https://orcid.org/0000-0002-0493-9037)
- Rui Li (ORCID: https://orcid.org/0009-0004-6820-0313)
- Lin Zhang (ORCID: https://orcid.org/0000-0002-3767-0249)
- Qian Wang (ORCID: https://orcid.org/0000-0001-8800-1312)
- Chuanhui Wang (ORCID: https://orcid.org/0000-0003-2166-7413)
Institutions
- Hubei University of Education (CN)
- Hubei University of Technology (CN)
- Taizhou University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-11-20
- DOI
- https://doi.org/10.1039/d5tc03919c
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00