In-Situ Calibration with Silicon-Based Noise Diode for Enhanced Industrial RF Testing
This paper presents a study on noise diode characterization and modeling in STMicroelectronics 55-nm Silicon-Germanium Bipolar Complementary Metal-Oxide-Semiconductor (SiGe BiCMOS) technology, aimed at enhancing calibration processes for on-wafer noise measurement in industrial testing. The proposed approach includes advanced modeling techniques, extraction of diode noise parameters, and the development of an innovative in-situ calibration methodology. Automated Excess Noise Ratio (ENR) extraction in real time makes calibration insensitive to process variability and allows real-time recalibration. Experimental validation through Noise Figure (NF) extraction of a bipolar transistor demonstrates the feasibility of using these noise diodes as integrated noise sources and the accuracy of the models. The proof of concept for the simplified calibration protocol using integrated noise diode sources meets industrial high-frequency measurement requirements.
Authors
- Giacomo Schiavolini
- Guillaume Ducournau (ORCID: https://orcid.org/0000-0002-9171-4767)
- Claudia Gonçalves (ORCID: https://orcid.org/0000-0002-6413-7132)
- João Carlos Azevedo Gonçalves (ORCID: https://orcid.org/0000-0002-5477-9270)
- Victor Fiorese (ORCID: https://orcid.org/0009-0006-6599-3017)
- Federico Alimenti (ORCID: https://orcid.org/0000-0002-4523-2193)
- D. Gloria (ORCID: https://orcid.org/0000-0003-2763-8453)
- S. An
Institutions
- University of Perugia (IT)
- Institute for Environmental Management (US)
- STMicroelectronics (France) (FR)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
Publication Details
- Published
- 2025-09-23
- DOI
- https://doi.org/10.23919/eumc65286.2025.11235243
- Primary Topic
- VLSI and Analog Circuit Testing
- Type
- article
- Field-Weighted Citation Impact
- 0.00