Experimental Study on the Repeatability of Nanoscale On-Wafer Calibration Structures on High Resistivity Silicon Substrate Up to 110 GHz
In this paper, we investigate the influence of probe positioning and chuck displacement on the S-parameter measurements of on-wafer calibration nanodevices fabricated on high-resistivity Silicon up to 110 GHz. Using the Thru-ReflectLine (TRL) method, we first assess their impact on the S parameters of two components (a transmission line and a short circuit), and then on the propagation constant and effective permittivity. Additionally, the results show that, due to the attenuation of the real part of the propagation constant, the TRL algorithm remains valid for any pair of lines.
Authors
- Clément Lenoir (ORCID: https://orcid.org/0000-0001-9271-3486)
- Mohamed Sebbache (ORCID: https://orcid.org/0000-0002-0004-261X)
- Kamel Haddadi (ORCID: https://orcid.org/0000-0002-4857-5220)
- Florent Marlec (ORCID: https://orcid.org/0000-0003-1431-7802)
- Djamel Allal (ORCID: https://orcid.org/0000-0001-6907-2414)
- Daouda Seck
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Lille (FR)
- Laboratoire National de Métrologie et d'Essais (FR)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- Université Polytechnique Hauts-de-France (FR)
- École Centrale de Lille (FR)
Publication Details
- Published
- 2025-09-23
- DOI
- https://doi.org/10.23919/eumc65286.2025.11235077
- Primary Topic
- Microwave and Dielectric Measurement Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00